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STW45NM60 N-channel 650V@Tjmax - 0.09 - 45A - TO-247 MDmeshTM Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STW45NM60 650V < 0.11 45A High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge TO-247 Low gate input resistance Description The MDmeshTM is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company's PowerMESHTM Internal schematic diagram horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor's products. Application Switching application Order code Part number Marking Package Packaging STW45NM60 W45NM60 TO-247 Tube April 2007 Rev 8 1/12 www.st.com 12 Contents STW45NM60 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW45NM60 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage