LGE mmbt3904 free download

File name mmbt3904.pdf

MMBT3904 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 200 mA PC Total Device Dissipation 200 mW RJA Thermal Resistance Junction to Ambient 625 /W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10A, IE=0 60 V Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage VEBO IE=10A, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 A Collector cut-off current ICEX VCE=30V,VBE(off)=3V 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A hFE(1) VCE=1V, IC=10mA 100 400 DC current gain hFE(2) VCE=1V, IC= 50mA 60 hFE(3) VCE=1V, IC= 100mA 30 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA