ST d4n52k3 f4n52k3 p4n52k3 u4n52k3 free download

File name std4n52k3_stf4n52k3_stp4n52k3_stu4n52k3.pdf

STD4N52K3, STF4N52K3 STP4N52K3, STU4N52K3 N-channel 525 V, 2.5 A, 2.1 IPAK, DPAK, TO-220FP, TO-220 , SuperMESH3TM Power MOSFET Features RDS(on) Order codes VDSS ID Pw max 3 3 2 1 1 STD4N52K3 2.5 A 45 W IPAK DPAK STF4N52K3 2.5 A 20 W 525 V < 2.6 STP4N52K3 2.5 A (1) 45 W STU4N52K3 2.5 A 45 W 1. Limited by package 3 100% avalanche tested 3 2 2 1 1 Extremely high dv/dt capability TO-220 TO-220FP Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery Figure 1. Internal schematic diagram characteristics Zener-protected D(2) Application Switching applications G(1) Description These devices are made using the SuperMESH3TM Power MOSFET technology that is obtained via improvements applied to STMicroelectronics' SuperMESHTM technology S(3) combined with a new optimized vertical structure. AM01476v1 The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STD4N52K3 4N52K3 IPAK Tube STF4N52K3 4N52K3 DPAK Tape and reel ST