ST d3nm60 d3nm60-1 p4nm60 free download

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STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 3 A TO-220, DPAK, IPAK , Zener-protected MDmeshTM Power MOSFET Features VDSS RDS(on) Type ID PW (@Tjmax) max 3 1 STD3NM60 3 3A 42 W 1 2 DPAK STD3NM60-1 650 < 1.5 TO-220 STP4NM60 4A 69 W 3 2 1 High dv/dt and avalanche capabilities IPAK Improved ESD capability Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Tight process control and high manufacturing yields Applications Switching Description Modems technology applies the benefits of the multiple drain process to STMicroelectronics' well- known PowerMESHTM horizontal layout structure. The resulting product offers low on-resistance, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Order code Marking Package Packing STD3NM60 D3NM60 DPAK Tape and reel STD3NM60-1 D3NM60 IPAK Tube STP4NM60 P4NM60 TO-220 Tube September 2009 Doc ID 8370 Rev 4 1/17 www.st.com 17 Contents STD3NM60, STD3NM60-1, STP4NM60 Contents 1 Electrical rati