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File | Date | Descr | Size | Popular | Mfg | Model |
Electron%20tot%20Super : Full Text Matches - Check >> | ||||||
Found in: fulltext index (15) | ||||||
Philips Electron tot Super.pdf | 30/11/21 | Philips Handboeken Philips Electron tot Super Philips Electron tot Super.pdf | 11225 kB | 9 | Philips | Electron tot Super |
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5991-0781EN Imaging Graphene via Low Voltage Field Emission Scanning Electron Microscopy - Applicati | 02/12/21 | Agilent 5991-0781EN Imaging Graphene via Low Voltage Field Emission Scanning Electron Microscopy - Application Note c20140929 [8].pdf | 692 kB | 1 | Agilent | 5991-0781EN Imaging Graphene via Low Voltage Field Emission Scanning Electron Microscopy - Applicati |
Potential of Low Voltage Scanning Electron Microscopy Use in Archaeology and History of Art 5991-151 | 21/10/21 | Agilent Potential of Low Voltage Scanning Electron Microscopy Use in Archaeology and History of Art 5991-1512EN c20141027 [8].pdf | 898 kB | 2 | Agilent | Potential of Low Voltage Scanning Electron Microscopy Use in Archaeology and History of Art 5991-151 |
taylor_model_45d_valve_electron_tube_tester.pdf | 21/06/20 | . Rare and Ancient Equipment Taylor taylor_model_45d_valve_electron_tube_tester.pdf | 899 kB | 13 | Taylor | taylor model 45d valve electron tube tester |
RGPA03(3.4-3.6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax systems. The part is matched at the input and output so no additi | 154 kB | 109 | Rficsolutions.Inc | RGPA03 |
Electron Supply_ ULPCT59_bp2_bk2.djvu | 13/10/07 | Но | 49 kB | 368 | russia | Elektron |
Reduced Power Spinup (RPS) - WD Scorpio ML40 Optimized Spinup Feature - External & Consumer Electron | 08/04/22 | Western Digital Reduced Power Spinup (RPS) - WD Scorpio ML40 Optimized Spinup Feature - External & Consumer Electronics (CE) Applications.pdf | 135 kB | 3 | Western Digital | Reduced Power Spinup (RPS) - WD Scorpio ML40 Optimized Spinup Feature - External & Consumer Electron |
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PH'ILIPS - Frank's electron Tube Data sheets.pdf | 13/04/23 | osciloskop | 889 kB | 3 | Philips | Philips GM2882 |
RGLNA09(5.15-5.35 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGLNA09 is 5.15 to 5.35 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier .The device is designed for 802.11a and WLAN MIMO system. The noise figure is 1.4 dB at 5.25 GHz. The RGLNA09 i | 36 kB | 61 | Rficsolutions.Inc | RGLNA09 |
RGLNA08(2.4-2.5 GHz GaAs pHEMT).pdf | 13/02/08 | The RGLNA08 is 2.4 to 2.5 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11b/g and WLAN MIMO system. The noise figure is 1.5 dB at 2.4 GHz and die area is | 77 kB | 64 | Rficsolutions.Inc | RGLNA08 |
RGDA01(2-6 GHz GaAs pHEMT).pdf | 13/02/08 | The RGDA01 is 2.0 to 6.0 GHz GaAs Enhancement mode psuedomorphic high electron mobility transistor Driver Amplifier. The device is designed for IEEE 802.11a/b/g, WLAN standards and Cellular system. The driver amplifier can provide upto 20 dBm power | 74 kB | 122 | Rficsolutions.Inc | RGDA01 |
RGLNA02(2-6 GHz, 3V GaAs pHEMT).pdf | 13/02/08 | The RGLNA02 is 2.0 to 6.0 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor Low noise amplifier. The device is designed for 802.11a/b/g and Wi-Fi systems. It gives Power Output of 5 dBm at P1 dB. The minimum no | 59 kB | 65 | Rficsolutions.Inc | RGLNA02 |
RGPA04(4.9-5.9 GHz GaAs pHEMT).pdf | 13/02/08 | The RGPA04 is a 4.9 to 5.9 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power amplifier. The device is designed for 802.11a WLAN system. The part is matched at the input and output so no additional RF | 104 kB | 99 | Rficsolutions.Inc | RGPA04 |
RTV01(CATV).pdf | 13/02/08 | The RTV01 is a CATV Line Amplifier IP block. CATV Line Amplifier designed using GaAs Enhancement mode psuedomorphic high electron mobility transistor (pHEMT). The amplifier provides low distortion and noise figure along with flat gain. The part is bi | 185 kB | 967 | Rficsolutions.Inc | RTV01 |
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RGPA05(1.85-1.91 GHz GaAs pHEMT ).pdf | 13/02/08 | The RGPA05 is a 1.85 to 1.91 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC power stage. This power stage can be preceded by a Driver stage to realize a complete amplifier. It has been designed speciall | 118 kB | 126 | Rficsolutions.Inc | RGPA05 |