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PZT2222A
NPN Silicon Planar Epitaxial Transistor
COLLECTOR
2, 4 SOT-223
4
1. BASE
BASE
2.COLLECTOR
1 1
3.EMITTER 2
4.COLLECTOR 3
3
EM ITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current (DC) IC(DC) 0.6 Adc
Total Device Disspation TA=25 C PD 1.5 W
Junction Temperature Tj 150 C
Storage, Temperature Tstg -65 to +150 C
Device Marking
PZT2222A=GT2222A
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) V(BR)CEO 40 - Vdc
Collector-Base Breakdown Voltage (IC=10