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PMBTA45
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 -- 10 March 2010 Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9050T.
1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
1.3 Applications
Electronic ballasts
LED driver for LED chain module
LCD backlighting
Automotive motor management
Flyback converters
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCESM collector-emitter peak VBE = 0 V - - 500 V
voltage
VCEO collector-emitter voltage open base - - 500 V
IC collector current - - 0.15 A
hFE DC current gain VCE = 10 V; IC = 30 mA 50 100 -
NXP Semiconductors PMBTA45
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
3 3
2 emitter
3 collector 1
1 2
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PMBTA45 - plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PMBTA45 LK*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMBTA45_2 All information provided in this document is subject to legal disclaimers.