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CZT127
SOT-223 Transistor(PNP)
1. BASE
2. COLLECTOR SOT-223
1 3. EMITTER
Features
Complementary to CZT122
Silicon Power Darlington Transistors
Low speed switching and amplifier applications
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -5 A
PC Collector Power Dissipation 1 W
Tj Junction Temperature 150
Tstg Storage Temperature -65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1m A,IE=0 -100 V
Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V
Collector cut-off current ICBO VCB=-100V,IE=0 -200 uA
Base cut-off current ICEO VCE=-50V,IB=0 -500 uA
Emitter cut-off current IEBO VEB=-5V,IC=0 -2 mA
hFE(1) VCE=-3V,IC=-0.5A 1000
DC current gain
hFE(2) VCE=-3V,IC=-3A 1000
VCE(sat)1 IC=-3A,IB=-12mA -2 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-5A,IB=-20mA -4 V
Base-emitter voltage VBE(on) VCE=-3V,IC=-3A -2.5 V
Transition frequency fT VCE=-4V,IC=-3A,f=1MHz 4 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1.0MHz 200 pF
CZT127
SOT-223 Transistor(PNP)
Typical Characteristics
TypicalCharacteristics CZT127