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STD3NM50
STD3NM50-1
N-CHANNEL 550V @ Tjmax- 2.5 - 3A DPAK/IPAK
Zener-Protected MDmeshTM MOSFET
TYPE VDSS RDS(on) ID
(@Tjmax)
STD3NM50 550V <3 3A
STD3NM50-1 550V <3 3A
s TYPICAL RDS(on) = 2.5 3 3
HIGH dv/dt AND AVALANCHE CAPABILITIES 2
s
1 1
s IMPROVED ESD CAPABILITY
s LOW INPUT CAPACITANCE AND GATE
s)
CHARGE DPAK IPAK
LOW GATE INPUT RESISTANCE TO-252
t(
s TO-251
TIGHT PROCESS CONTROL AND HIGH
uc
s
MANUFACTORING YIELDS
d
ro
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro- P
INTERNAL SCHEMATIC DIAGRAM
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
le te
so
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Ob
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition's products.
-
(s)
APPLICATIONS
ct
The MDmeshTM family is very suitable for increase
the power density of high voltage converters allow-
du
ing system miniaturization and higher efficiencies.
o
Pr
ABSOLUTE MAXIMUM RATINGS
e
let
Symbol Parameter Value Unit
VGS Gate- source Voltage