Text preview for : stu10nc70z.pdf part of ST stu10nc70z . Electronic Components Datasheets Active components Transistors ST stu10nc70z.pdf
Back to : stu10nc70z.pdf | Home
STU10NC70Z
STU10NC70ZI
N-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220
Zener-Protected PowerMESHTMIII MOSFET
TYPE VDSS RDS(on) ID
STU10NC70Z 700 V <0.75 9.4 A
STU10NC70ZI 700 V <0.75 9.4 A
s TYPICAL RDS(on) = 0.58
s EXTREMELY HIGH dv/dt CAPABILITY
s GATE-TO-SOURCE ZENER DIODES 3
s 100% AVALANCHE TESTED 2
1
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED Max220 I-Max220
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STU10NC70Z STU10NC70ZI
VDS Drain-source Voltage (VGS = 0) 700 V
VDGR Drain-gate Voltage (RGS = 20 k) 700 V
VGS Gate- source Voltage