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BUH515D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s HIGH VOLTAGE CAPABILITY
s U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
s NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR 3
2
TV 1
DESCRIPTION
The BUH515D is manufactured using ISOWATT218
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
R Typ. = 12
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CBO Collector-Base Voltage (IE = 0) 1500 V
V CEO Collector-Emitter Voltage (I B = 0) 700 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 8 A
I CM Collector Peak Current (tp < 5 ms) 15 A
IB Base Current 5 A
I BM Base Peak Current (t p < 5 ms) 8 A
o
P t ot Total Dissipation at T c = 25 C 50 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
June 1997 1/7
BUH515D
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 2.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1300 V 10