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STX13003
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications
Compact fluorescent lamps (CFLs)
SMPS for battery charger TO-92 TO-92AP
Description
Figure 1. Internal schematic diagram
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STX13003G and STX13003G-AP are
supplied using halogen-free molding compound.
Table 1. Device summary
Order codes Marking Package Packaging
STX13003 X13003 TO-92 Bulk
STX13003G X13003G TO-92 Bulk
STX13003-AP X13003 TO-92AP Ammopack
STX13003G-AP X13003G TO-92AP Ammopack
July 2008 Rev 5 1/11
www.st.com 11
Electrical ratings STX13003
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Collector-base voltage (IC = 0, IB = 0.5A, tP < 10 ms) V(BR)EBO V
IC Collector current 1 A
ICM Collector peak current (tP < 5 ms) 3 A
IB Base current 0.5 A
IBM Base peak current (tP < 5 ms) 1.5 A
PTOT Total dissipation at Tc = 25