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KSC5039 NPN SILICON TRANSISTOR
HIGH VOLTAGE POWER SWITCH
TO-220
SWITCHING APPLICATION
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 800 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 7 V
Collector Current (DC) IC 5 A
Collector Current (Pulse) IC 10 A
Base Current IB 3 A
)
Collector Dissipation ( T C=25 PC 70 W
Junction Temperature TJ 150 1.Base 2.Collector 3.Emitter
Storage Temperature T STG -65 ~ 150
ELECTRICAL CHARACTERISTICS (T C =25)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 V
Collector-Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 400 V
Emitter-Base Breakdown Voltage BVEBO IC = 1mA, IC=0 7
Collector Cutoff Current ICBO VCB = 500V, IE = 0 10 uA
Emitter Cutoff Current IEBO VEB = 7V, IC = 0 10 uA
%DC Current Gain hFE VCE = 5V, IC = 0.3A 10
%Collector Emitter Saturation Voltage VCE(sat) IC = 2.5A, IB = 0.5A 1.5 V
%Base Emitter Saturation Voltage VBE(sat) IC = 2.5A, IB = 0.5A 2.0 V
Current Gain Bandwidth Product fT VCE = 5V, IC = 0.1A 10 MHz
Output Capacitance COB VCB = 10V , f = 1MHz 40 pF
Turn On Time tON IB1 = -IB2 = 0.5A 1 us
Storage Time tSTG IC = 2.5A 3 us
Fall Time tF VCC =150V 0.8 us
% Plus test : PW=300 I, Duty Cycle=2% Pulsed
KSC5039 NPN SILICON TRANSISTOR
KSC5039 NPN SILICON TRANSISTOR