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STS4DPFS30L
P-CHANNEL 30V - 0.045 - 5A SO-8
STripFETTM MOSFET PLUS SCHOTTKY RECTIFIER

Table 1: General Features Figure 1: Package
MOSFET TYPE VDSS RDS(on) ID

STS4DPFS30L 30 V < 0.055 5A
SCHOTTKY IF(AV) VRRM VF(MAX)

3A 30 V 0.51 V
s TYPICAL RDS(on) = 0.045


s)
s CONDUCTION LOSSES REDUCED


t(
s SWITCHING LOSSES REDUCED
LOW THRESHOLD DRIVE

uc
s

s STANDARD OUTLINE FOR EASY SO-8
AUTOMATED SURFACE MOUNT ASSEMBLY
d
DESCRIPTION
This MOSFET is the latest development of STMi- P ro
croelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor
le te
Figure 2: Internal Schematic Diagram


so
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and


Ob
less critical alignment steps therefore a remark-
able manufacturing reproducibility.

-
APPLICATIONS
s DC/DC CONVERTERS
t( s)
s BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT
d uc
ro
s POWER MANAGEMENT IN CELLULAR

PHONES
P
s DC MOTOR DRIVE

e
let
so
Ob
Table 2: Order Codes
PART NUMBER MARKING PACKAGE PACKAGING
STS4DPF30L 4DFS30L SO-8 TAPE & REEL




Rev. 1
December 2004 1/9
STS4DPFS30L
Table 3: MOSFET Absolute Maximum Ratings
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k) 30 V
VGS Gate- source Voltage