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D882S
Transistor(NPN)

1.EMITTER
TO-92
2.COLLECTOR

3.BASE

Features
Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.75 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V
Collector cut-off current ICBO VCB= 40V, IE=0 1