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KTC3192(NPN)
TO-92 Transistors
1. COLLECTOR
TO-92
2. EMITTER
3. BASE
Features
High power gain: Gpe=29dB(Typ)(f=10.7MHZ)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 50 mA
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 625 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 4 V
Collector cut-off current ICBO VCB= 35V , IE=0 0.1 A
Emitter cut-off current IEBO VEB= 4V , IC=0 1.0 A
DC current gain hFE VCE=12 V, IC= 2mA 40 240
Collector-emitter saturation voltage VCE(sat) IC= 10mA, IB= 1mA 0.4 V
Base-emitter saturation voltage VBE(sat) IC= 10mA, IB= 1mA 1.0 V
Transition frequency fT VCE= 10 V, IC= 1mA 100 400 MHz
Collector output capacitance Cob VCB=10 V,IE=0,f=1MHZ 1.4 3.2 pF
VCE=10V,IC=1mA,
Collector-base time constant Cc.rbb' 10 50 pS
f=30MHZ
VCC=6V,IC=1mA,
Power gain Gpe 27 33 dB
f=10.7MHZ
CLASSIFICATION OF hFE(1)
Rank R O Y
Range 40-80 70-140 120-240
KTC3192(NPN)
TO-92 Transistors
Typical Characteristics
KTC3192(NPN)
TO-92 Transistors