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BCPA14
NPN Silicon
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-89
Description
The BCPA14 is a Darlington amplifier transistor designed
for applications requiring exremely high current gain.
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 4.4 4.6 G 3.00 REF.
B 4.05 4.25 H 1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L 5 q TYP.
M 0.70 REF.
o
Absolute Maximum Ratings at TA=25 C
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 30 V
Collector to Emitter Voltage VCEO 30 V
Emitter to Base Voltage VE BO 10 V
Collect Current IC 500 mA
Total Power Dissipation PD 1.0 W
o
Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C
ELECTRICAL CHARACTERISTICS (Tamb=25 o C)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO 30 - - V IC=100u A, IE=0
Collector-Emitter Breakdown Voltage BV CEO 30 - - V IC= 100uA, I B =0
Emitter-Base Breakdown Voltage BVEBO 10 - - V IE=10uA, IC=0
Collector Cut-off Current ICBO - - 100 nA VCB=30V, IE=0
Collector Cut-off Current ICEO - - 100 nA VEB=10V, IC=0
Collector Output Capacitance Cob - - 6 pF VCB=10V,f=1MHz,IE=0
Collector-Emitter Saturation Voltage *VCE(sat) - - 1.5 V IC=100mA, IB =0.1mA
Base-Emitter Voltage, On *VBE(on) - - 2.0 V VCE=5V, IC=100mA
DC Current Gain *hFE1 10K - - VCE=5V, I C=10mA
DC Current Gain *hFE2 20K - - VCE=5V, I C=100mA
Transition Frequency fT 125 - - MHz VCE=5V, I C =10mA, f=100MHz
*Pulse Test: Pulse Width