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2SA1013
TO-92L Transistor (PNP)
TO-92L
4.700
5.100
1. EMITTER
7.800
2. COLLECTOR 8.200
0.600
0.800
3. BASE
3
2 0.350
0.550
1
Features
13.800
14.200
High voltage:VCEO=-160V 1.270 TYP
Large continuous collector current capability 2.440
2.640
Complementary to 2SC2383 0.000
0.300
1.600
0.350
3.700 0.450
4.100 1.280
1.580
4.000
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -160 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -1 A
PC Collector Power Dissipation 0.9 W
Tj Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=- 100A , IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -160 V
Emitter-base breakdown voltage V(BR)EBO IE= -10A, IC=0 -6 V
Collector cut-off current ICBO VCB=-150 V , IE=0 -1 A
Emitter cut-off current IEBO VEB=-6V, IC=0 -1 A
DC current gain hFE VCE=-5 V, IC=- 200mA 60 300
Collector-emitter saturation voltage VCE(sat) IC= -500m A, IB= -50mA -1.5 V
Base-emitter voltage VBE IC= -5 mA, VCE=- 5V -0.75 V
Transition frequency fT VCE= -5 V, IC= -200mA 15 MHz
Collector Output capacitance Cob VCB=-10V, IE=0,f=1MHz 35 pF
CLASSIFICATION OF hFE
Rank R O Y
Range 60-120 100-200 200-300
2SA1013
TO-92L Transistor (PNP)
Typical characteristics