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C2611(NPN)
TO-126 Transistor
TO-126
1. EMITTER 2.500
7.400
7.800 1.100 2.900
1.500
2. COLLECTOR
3.900
3.000
4.100
3. BASE 3.200
10.60 0 0.000
3 11.00 0 0.300
2
1
Features 2.100
2.300
power switching applications 1.170
1.370
MAXIMUM RATINGS (TA=25 unless otherwise noted) 15.30 0
15.70 0
Symbol Parameter Value Units
VCBO Collector -Base Voltage 600 V
VCEO Collector-Emitter Voltage 400 V 0.660
0.860
VEBO Emitter-Base Voltage 7 V 0.450
0.600
IC Collector Current -Continuous 0.2 A 2.290 TYP
4.480
4.680
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150 Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 600 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 100 A , IC=0 7 V
Collector cut-off current ICBO VCB= 600V, IE=0 100 A
Collector cut-off current ICEO VCE= 400V, IB=0 200 A
Emitter cut-off current IEBO VEB=7V, IC=0 100 A
hFE(1) VCE=20V, IC=20mA 10 40
DC current gain
hFE(2) VCE=10V, IC= 0.25mA 5
IC= 50mA, IB= 10mA 0.5 V
Collector-emitter saturation voltage VCE(sat)
IC= 100mA, IB= 20mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC= 50mA, IB=10mA 1.2 V
VCE=20V,IC=20mA
Transition frequency fT 8 MHz
f = 1MHz
Fall time tS IC=50mA, 0.3 s
IB1=-IB2=5mA,
Storage time tf VCC=45V 1.5 s
CLASSIFICATION OF hFE(1)
Rank
Range 10-15 15-20 20-25 25-30 30-35 35-40
C2611(NPN)
TO-126 Transistor