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STS6DNF30V
DUAL N-CHANNEL 30V - 0.026 - 6A SO-8
2.5V-DRIVE STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
<0.030 (@4.5V)
STS6DNF30V 30 V 6A
<0.038 (@2.5V)
s TYPICAL RDS(on) = 0.026 (@4.5V)
s TYPICAL RDS(on) = 0.030 (@2.5V)
s ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
SO-8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size TM"
strip-based process. The resulting transistor shows INTERNAL SCHEMATIC DIAGRAM
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
s BATTERY SAFETY UNIT IN NOMADIC
EQUIPMENT
s DC-DC CONVERTERS
s POWER MANAGEMENT IN PORTABLE/
DESKTOP PCS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k) 30 V
VGS Gate- source Voltage