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SSG4530C
N-Ch: 5.3A, 30V, RDS(ON) 82 m
P-Ch: -5.2A, -30V, RDS(ON) 80 m
Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


DESCRIPTION SOP-8
These miniature surface mount MOSFETs
B
utilize a high cell density trench process to provide low
RDS(on) and to ensure minimal power loss and heat
dissipation.
L D

FEATURES M

Low RDS(on) provides higher efficiency and A C
extends battery life. N
Low thermal impedance copper leadframe
J K

SOP-8 saves board space
H G F E
Fast switching speed
High performance trench technology Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 5.8 6.20 H 0.35 0.51
B 4.80 5.00 J 0.375 REF.
APPLICATION C 3.80 4.00 K 45