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BDY90P
NPN SILICON POWER TRANSISTOR
s NPN TRANSISTOR
s LOW COLLECTOR EMITTER SATURATION
VOLTAGE
s FAST-SWITCHING SPEED
APPLICATION
s GENERAL PURPOSE SWITCHING
APPLICATIONS
s GENERAL PURPOSE AMPLIFIERS 3
s DC CURRENT AND BATTERY OPERATED
2
1
ELECTRONIC BALLAST
DESCRIPTION TO-220
The BDY90P is a silicon multiepitaxial planar
NPN power transistors in TO-220 case intented
for use in switching, linear applications and
emergency lighting.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-base Voltage (I E = 0) 100 V
V CEV Collector-emitter Voltage (V BE = -1.5V) 100 V
V CEO Collector-emitter Voltage (I B = 0) 80 V
V EBO Emitter-base Voltage (I C = 0) 6 V
IC Collector Current 10 A
I CM Collector Peak Current (repetitive) 15 A
IB Base Current 2 A
P tot Total Dissipation at T c 25 o C 60 W
o
T stg Storage Temperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 150 C
June 1997 1/4
BDY90P
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 2.08 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CE =V CBO 1 mA
Current (I E = 0)
I CEV Collector Cut-off V CE =V CEV 1 mA
Current (V BE = -1.5V) T case = 150 o C
V CE =V CEV 3 mA
I EBO Emitter Cut-off Current V EB = 6 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 100 mA 80 V
Sustaining Voltage
(I B = 0)
V CE(sat) Collector-emitter IC = 5 A I B = 0.5 A 0.5 V
Saturation Voltage I C = 10 A IB = 1 A 1.5 V
V BE(sat) Base-emitter IC = 5 A I B = 0.5 A 1.2 V
Saturation Voltage I C = 10 A IB = 1 A 1.5 V
h FE DC Current Gain IC = 1 A V CE = 2 V 30
IC = 5 A V CE = 5 V 50
I C = 10 A V CE = 5 V 20
ft Transition-Frequency I C = 0.5 A V CE = 5 V 70 MHz
f = 5 MHz
t on Turn-on Time IC = 5 A I B1 = 0.5 A 0.35