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STP80NE06-10
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
TYPE V DSS R DS(on) ID
STP80NE06-10 60 V <0.01 80 A
s TYPICAL RDS(on) = 0.0085
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION 3
2
This Power MOSFET is the latest development of 1
SGS-THOMSON unique "Single Feature SizeTM "
strip-based process. The resulting transistor TO-220
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS INTERNAL SCHEMATIC DIAGRAM
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage