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STS12NH3LL
N-channel 30 V - 0.008 - 12 A - SO-8
ultra low gate charge STripFETTM Power MOSFET
Features
Type VDSS RDS(on) ID
STS12NH3LL 30 V <0.0105 12 A
Optimal RDS(on) x Qg trade-off @ 4.5 V
Switching losses reduced
Low input capacitance
Low threshold device SO-8
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Application
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Switching applications
Description P
This series is based on the latest generation of
Figure 1.
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Internal schematic diagram
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ST's proprietary "STripFETTM" technology. An
innovative layout enables the device to also
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exhibit extremely low gate charge for the most
demanding requirements as high-side switch in
high-frequency DC-DC converters. It's therefore -
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ideal for high-density converters in telecom and
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computer applications.
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Table 1. Device summary
O Order code
STS12NH3LL
Marking
12H3LL
Packag
SO-8
Packaging
Tape & reel
November 2007 Rev 9 1/13
www.st.com 13
Contents STS12NH3LL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ............................................... 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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ct (s)
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2/13
STS12NH3LL Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS(1) Gate-source voltage