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STW80NE06-10
N-CHANNEL 60V - 0.0085 - 80A TO-247
STripFETTM POWER MOSFET
TYPE VDSS RDS(on) ID
STW80NE06-10 60 V < 0.01 80 A(*)
s TYPICAL RDS(on) = 0.0085
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION 3
2
s)
1
t(
TO-247
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature SizeTM"
d uc
ro
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis- INTERNAL SCHEMATIC DIAGRAM
tance, rugged avalanche characteristics and less
P
te
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
le
so
Ob
APPLICATIONS
s DC-DC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
-
(s)
s SOLENOID AND RELAY DRIVERS
ct
s AUTOMOTIVE ENVIRONMENT
o du
Pr
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
e
let
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k) 60 V
VGS
o Gate- source Voltage