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KTC3876
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
High hFE: hFE=70-400
Complementary to KTA1505
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Power Dissipation 200 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB= 35V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
hFE1 VCE=1V, IC= 100mA 70 400
DC current gain VCE=6V, IC= 400mA O 25
hFE2
Y 40
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V
base-emitter voltage VBE VCE=1V, IB= 100mA 1 V
Transition frequency fT VCE=6V, IC=20mA 300 MHz
Collector output capacitance Cob VCB=6V,IE=0,f=1MHZ 7 pF
CLASSIFICATION OF hFE
Rank O Y GR(G)
Range 70-140 120-240 200-400
Marking WO WY WG
KTC3876
SOT-23 Transistor(NPN)
Typical Characteristics