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2STC2510
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 100 V
Complementary to 2STA2510
Typical ft = 20 MHz
Fully characterized at 125 oC
3
Application 1
2
Audio power amplifier TO-3P
Description
Figure 1. Internal schematic diagram
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1. Device summary
Order code Marking Package Packaging
2STC2510 2STC2510 TO-3P Tube
November 2008 Rev 3 1/8
www.st.com 8
Electrical ratings 2STC2510
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 6 V
IC Collector current 25 A
ICM Collector peak current (tP < 5ms) 50 A
PTOT Total dissipation at Tc = 25