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STW90NF20
N-channel 200 V, 0.019 , 83 A, TO-247
low gate charge STripFETTM Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STW90NF20 200 V < 0.023 83 A
Exceptional dv/dt capability
Low gate charge 3
2
1
100% Avalanche tested
TO-247
Application
Switching applications
Description
Figure 1. Internal schematic diagram
This Power MOSFET series realized with
STMicroelectronics unique STripFETTM process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters
Table 1. Device summary
Order code Marking Package Packaging
STW90NF20 90NF20 TO-247 Tube
August 2008 Rev 2 1/12
www.st.com 12
Contents STW90NF20
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW90NF20 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 200 V
VGS Gate-source voltage