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STL26NM60N
N-channel 600 V, 0.160 19 A PowerFLATTM (8x8) HV
,
ultra low gate charge MDmeshTM II Power MOSFET
Features
VDSS @ RDS(on)
Type ID
TJmax max
STL26NM60N 650 V < 0.185 19 A (1)
1. The value is rated according to Rthj-case
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description Figure 1. Internal schematic diagram
This device is made using the second generation
of MDmeshTM technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout to yield one
of the world's lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1. Device summary
Order code Marking Package Packaging
STL26NM60N 26NM60N PowerFLATTM (8x8) HV Tape and reel
February 2011 Doc ID 18472 Rev 1 1/13
www.st.com 13
Contents STL26NM60N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 18472 Rev 1
STL26NM60N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate-source voltage