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BF820/BF822
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Low current (max.50 mA)
High voltage (max.300V)
Telephony and professional communication equipment.
MARKING: BF820:1V, BF822: 1X
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Collector-Base Voltage BF820 300
VCBO V
BF822 250
Collector-Emitter Voltage BF820 300
VCEO V
BF822 250
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 50 mA
PC Collector Power Dissipation 0.25 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
IC=100A, IE=0 BF820 300
Collector-base breakdown voltage V(BR)CBO V
BF822 250
IC=1mA, IB=0 BF820 300
Collector-emitter breakdown voltage V(BR)CEO V
BF822 250
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB=200V,IE=0 0.01 A
Emitter cut-off current IEBO VEB= 5V,IC=0 0.05 A
DC current gain hFE VCE= 20V,IC=25mA 50
Collector-emitter saturation voltage VCE(sat) IC=30mA,IB= 5mA 0.6 V
Transition frequency fT VCE=10V, IC= 10mA,f=100MHz 60 MHz
Collector output capacitance Cob VCB=30V,IE=0,f=1MHz 1.6 pF
BF820/BF822
SOT-23 Transistor(NPN)
Typical Characteristics