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2SC2714
SOT-23 Transistor(NPN)


1. BASE SOT-23
2. EMITTER
3. COLLECTOR




Features
Small reverse Transfer Capacitance:Cre=0.7pF(typ.)
Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 20 mA
PC Collector Power Dissipation 100 mW
Tj Junction Temperature 125
Tstg Storage Temperature -55-+125

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 4 V

Collector cut-off current ICBO VCB=18V,IE=0 0.5 A

Emitter cut-off current IEBO VEB=4V,IC=0 0.5 A

DC current gain hFE VCE=6V,IC=1mA 40 200

Transition frequency fT VCE=6V,IC=1mA 550 MHz

Reverse Transfer capacitance Cre VCB=6V,IE=0,f=1MHz 0.7 pF

Noise figure NF VCE=6V,Ic=1mA,f=100MHZ 2.5 5 dB



CLASSIFICATION OF hFE
Rank R O Y
Range 40-80 70-140 100-200
Marking QR QO QY
2SC2714
SOT-23 Transistor(NPN)


Typical Characteristics
2SC2714
SOT-23 Transistor(NPN)