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STW55NM50N
N-channel 500 V, 0.040 , 54 A, MDmeshTM II Power MOSFET
TO-247
Features
VDSS RDS(on)
Type ID
(@Tjmax) max
STW55NM50N 550 V <0.054 54 A
100% avalanche tested
3
Low input capacitance and gate charge 2
1
Low gate input resistance TO-247
Application
Switching applications
Description
Figure 1. Internal schematic diagram
This series of devices implements second
generation MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1. Device summary
Order code Marking Package Packaging
STW55NM50N 55NM50N TO-247 Tube
July 2008 Rev 2 1/12
www.st.com 12
Contents STW55NM50N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) .......................... 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW55NM50N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 500 V
VGS Gate- source voltage