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STN1NC60
N-CHANNEL 600V - 12 - 0.3A - SOT-223
PowerMeshTMII MOSFET
TYPE VDSS RDS(on) ID
STN1NC60 600 V <15 0.3 A
s TYPICAL RDS(on) = 12 2
(s)
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3
ct
s NEW HIGH VOLTAGE BENCHMARK 2
du )
s GATE CHARGE MINIMIZED 1
DESCRIPTION
ro SOT-223
t(s
TM
P
The PowerMESH II is the evolution of the first
TM.
generation of MESH OVERLAY The layout re-
te uc
finements introduced greatly improve the Ron*area
le od
figure of merit while keeping the device at the lead-
o
ing edge for what concerns swithing speed, gate
bs e Pr
charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM
- O let
APPLICATIONS
s AC ADAPTORS AND BATTERY CHARGERS
(s) bso
s SWITH MODE POWER SUPPLIES (SMPS)
ct
du ) - O
ro
P t(s
ol ete oduc
bs e Pr
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
O
let
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
b so VGS
ID
Gate- source Voltage
Drain Current (continuos) at TC = 25