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SEMICONDUCTOR KRC110~KRC114
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B C
FEATURES
With Built-in Bias Resistors.
A
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
D 0.45
J
E 1.00
F 1.27
EQUIVALENT CIRCUIT
G 0.85
H 0.45
C H J _
14.00 + 0.50
F F K 0.55 MAX
L 2.30
R1 M 0.45 MAX
B 1 2 3
N 1.00
C
L
M
1. EMITTER
2. COLLECTOR
3. BASE
E
TO-92
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150