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SEMICONDUCTOR KRC860E~KRC864E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B
B1
FEATURES
With Built-in Bias Resistors.
1 6 DIM MILLIMETERS
C
Simplify Circuit Design. A _
1.6 + 0.05
A1
_
A
A1 1.0 + 0.05
Reduce a Quantity of Parts and Manufacturing Process. 2 5 _
C
B 1.6 + 0.05
High Packing Density. B1 _
1.2 + 0.05
D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) _
J 0.12 + 0.05
P P
6 5 4 P 5
C
H
R1
J
B Q1
Q2 1. Q1 EMITTER
2. Q1 BASE
3. Q2 COLLECTOR
4. Q2 EMITTER
E 1 2 3
5. Q2 BASE
6. Q1 COLLECTOR
TES6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V Collector Power Dissipation PC * 200 mW
Collector-Emitter Voltage VCEO 50 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO 5 V Storage Temperature Range Tstg -55 150
Collector Current IC 100 mA * Total Rating.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC860E - 4.7 -
KRC861E - 10 -
Input Resistor KRC862E R1 - 100 - k
KRC863E - 22 -
KRC864E - 47 -
6 5 4
Marking
Lot No.
MARK SPEC
Type Name
TYPE KRC860E KRC861E KRC862E KRC863E KRC864E
MARK NK NM NN NO NP
1 2 3
2008. 9. 23 Revision No : 3 1/4
KRC860E~KRC864E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRC860E - 0.025 -
KRC861E - 0.03 -
Rise Time KRC862E tr - 0.3 -
KRC863E - 0.06 -
KRC864E - 0.11 -
KRC860E - 3.0 -
KRC861E VO=5V - 2.0 -
Switching
Storage Time KRC862E tstg VIN=5V - 6.0 - S
Time
KRC863E RL=1k - 4.0 -
KRC864E - 5.0 -
KRC860E - 0.2 -
KRC861E - 0.12 -
Fall Time KRC862E tf - 2.0 -
KRC863E - 0.9 -
KRC864E - 1.4 -
2008. 9. 23 Revision No : 3 2/4
KRC860E~KRC864E
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC860E KRC860E
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC861E KRC861E
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC862E KRC862E
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
2008. 9. 23 Revision No : 3 3/4
KRC860E~KRC864E
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC863E KRC863E
2k 2
I C /I B =20
1k
DC CURRENT GAIN hFE
1
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC864E KRC864E
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
VCE =5V
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
2008. 9. 23 Revision No : 3 4/4