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SEMICONDUCTOR KTA1045D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
A I
C J
FEATURES DIM MILLIMETERS
D
A _
6.60 + 0.2
High breakdown voltage VCEO 120V, high current 1A. B
C
_
6.10 + 0.2
_ 0.2
5.0 +
D _
1.10 + 0.2
Low saturation voltage and good linearity of hFE.
B
E _
2.70 + 0.2
F _
2.30 + 0.1
Complementary to KTC2025D/L H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
P 1.00 + 0.10
Q 0.95 MAX
MAXIMUM RATING (Ta=25 ) 1. BASE
2. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT 3. EMITTER
Collector-Base Voltage VCBO -120 V
VCEO DPAK
Collector-Emitter Voltage -120 V
Emitter-Base Voltage VEBO -5 V
IC -1 A
C
I
J
Collector Current A
ICP -2
D
DIM MILLIMETERS
B
Collector Power Ta=25 1.0 A _
6.60 + 0.2
PC W B _
6.10 + 0.2
_
5.0 + 0.2
Q
C
Dissipation
K
Tc=25 8 H P
D _
1.10 + 0.2
E _
9.50 + 0.6
G _
E
F 2.30 + 0.1
Junction Temperature Tj 150 G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
Storage Temperature Range Tstg -55 150 F F L
J _
0.5 + 0.1
K _
2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut of Current ICBO VCB=-50V, IE=0 - - -1 A
Emitter Cut of Current IEBO VEB=-4V, IC=0 - - -1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -120 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
hFE(1) Note VCE=-5V, IC=-50mA 100 - 320
DC Current Gain
hFE(2) VCE=-5V, IC=-500mA 20 - -
Gain Bandwidth Product fT VCE=-10V, IC=-50mA - 110 - MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 30 - pF
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - -0.15 -0.4 V
Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V
I B2
Turn-on Time ton I B1 - 80 -
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