Text preview for : 2sa1980.pdf part of LGE 2sa1980 . Electronic Components Datasheets Active components Transistors LGE 2sa1980.pdf
Back to : 2sa1980.pdf | Home
2SA1980(PNP)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Low collector saturation voltage: VCE(sat) =-0.3V(Max.)
Low output capacitance : Cob =4pF (Typ.)
Complementary pair with 2SC5343
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -150 mA
PC Collector Power Dissipation 625 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 A
Collector cut-off current ICEO VEB=-5V,IC=0 -0.1 A
DC current gain hFE VCE=-6V,IC=-2mA 70 700
Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V
Transition frequency fT VCE=-10V,IC=-1mA 80 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 4 7 pF
Noise figure NF VCE=-6V,IC=-0.1mA,f=1KHZ,RS=10K 10 dB
CLASSIFICATION OF hFE
Rank O Y G L
Range 70-140 120-240 200-400 300-700
2SA1980(PNP)
TO-92 Bipolar Transistors
Typical Characteristics