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SEMICONDUCTOR KTX213E
TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B
B1
FEATURES
Including two devices in TES6.
1 6 DIM MILLIMETERS
C
(Thin Extreme Super mini type with 6 leads.) A _
1.6 + 0.05
A1
A
A1 _
1.0 + 0.05
With Built-in bias resistors. 2 5 _
C
B 1.6 + 0.05
Simplify circuit design. B1 _
1.2 + 0.05
D
3 4 C 0.50
Reduce a quantity of parts and manufacturing process. D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
P P
EQUIVALENT CIRCUIT P 5
Q1 C Q2 OUT
H
J
R1 Q2
IN 1. Q1 (EMITTER)
B 2. Q1 (BASE)
R1=47K 3. Q2 OUT (COLLECTOR)
R2=47K 4. Q2 COMMON (EMITTER)
R2 5. Q2 IN (BASE)
6. Q1 (COLLECTOR)
E COMMON
EQUIVALENT CIRCUIT (TOP VIEW) TES6
6 5 4
Marking
6 5 4
Lot No.
Q1
BH
Q2
Type Name
1 2 3
1 2 3
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -15 V
Collector-Emitter Voltage VCEO -12 V
Emitter-Base Voltage VEBO -6 V
IC -500
Collector Current
ICP * -1
* Single pulse Pw=1mS.
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage VO 50 V
Input Voltage VI 40, -10 V
Output Current IO 100
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation PD * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.
2008. 9. 23 Revision No : 1 1/4
KTX213E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -100 nA
Collector-Base Breakdown Voltage V(BR)CBO IE=-10 A -15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -6 - - V
DC Current Gain hFE VCE=-2V, IC=-10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-200mA, IB=-10mA - -100 -250 mV
Transition Frequency fT VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 6.5 - pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current IO(OFF) VO=50V, VI=0 - - 500
DC Current Gain GI VO=5V, IO=10 20 - -
Output Voltage VO(ON) IO=10 , II=0.5 - 0.1 0.3 V
Input Voltage (ON) VI(ON) VO=0.2V, IO=5 - 2.8 5.0 V
Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1 1.0 1.2 - V
Transition Frequency fT * VO=10V, IO=5 - 200 -
Input Current II VI=5V - - 0.18
Note : * Characteristic of Transistor Only.
2008. 9. 23 Revision No : 1 2/4
KTX213E
Q 1 (PNP TRANSISTOR)
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
1K -1K
I C /IB =20
Ta=125 C -500
500 -300
VOLTAGE VCE(sat) (mV)
Ta=25 C
DC CURRENT GAIN h FE
300
Ta=-40 C
-100
C
-50 125
Ta=
100 -30
25 C C
Ta= =-40
Ta
50 -10
30 -5
-3
VCE =-2V
10 -1
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
-1K
COLLECTOR-EMITTER SATURATION
-10K
Ta=25 C I C /IB =20
-500
BASE-EMITTER SATURATION
-300 -5K
VOLTAGE VCE(sat) (mV)
VOLTAGE VBE(sat) (mV)
-3K
-100
-50 I C /IB =50
-30 -1K Ta=-40 C
I C /IB =20
I C /IB =10
-10 -500 Ta=25 C C
Ta=125
-5 -300
-3
-1 -100
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
I C - VBE fT - IC
-1K 1K
TRANSITION FREQUENCY f T (MHz)
VCE =-2V VCE =-2V
COLLECTOR CURRENT IC (mA)
-500 Ta=25 C
-300 500
300
-100
-50
25 C
5 C
40 C
-30 100
Ta=1
Ta=2
Ta=-
-10 50
-5 30
-3
-1 10
0 -0.5 -1.0 -1.5 -1 -3 -10 -30 -100 -300 -1K
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA)
2008. 9. 23 Revision No : 1 3/4
KTX213E
Q 1 (PNP TRANSISTOR)
Cob - VCB , C ib - V EB
Pc - Ta
COLLECTOR LPOWER DISSIPATION PC (mW)
COLLECTOR OUTPUT CAPACITANCE C ob (PF)
1K
COLLECTOR INPUT CAPACITANCE C ib (PF)
I E =0A
500 f=1MHz 250
Ta=25 C
300
200
100
50 150
30
C ib
100
10
C ob 50
5
3
0
0 25 50 75 100 125 150
1
-0.1 -0.3 -1 -3 -10 -30 -100 AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-BASE VOLTAGE VCB (V)
EMITTER-BASE VOLTAGE VEB (V)
I O - V I(ON) I O - V I(OFF)
Q2 Q2
100 10k
VO =0.2V VO =5V
50 5k
OUTPUT CURRENT I O (mA)
OUTPUT CURRENT I O (