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Level 2.5e
Repair Documentation
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M55 Level 2.5e Repair Documentation
V 1.00
Version V 1.00 Date May 2003 Department ICM MP CCQ GRM Notes to change New document
V1.10 M55
Page 1 of 49 Company Confidential © Copyright Siemens AG
ICM MP CCQ GRM 01/03
Table of Contents:
1 2 3 4 4.1 4.2 LIST OF AVAILABLE LEVEL 2,5E PARTS M55................................................ 4 REQUIRED EQUIPMENT FOR LEVEL 2,5E ...................................................... 5 REQUIRED SOFTWARE FOR LEVEL 2,5E M55 ............................................... 5 RADIO PART ...................................................................................................... 6 Power Supply RF-Part .................................................................................... 7 Frequency generation .................................................................................... 8
Synthesizer: The discrete VCXO (26MHz)...........................................................................8 Synthesizer: LO1 ................................................................................................................10 Synthesizer: LO2 ................................................................................................................12 Synthesizer: PLL ................................................................................................................13
4.2.1 4.2.2 4.2.3 4.2.4
4.3 4.4
Antenna switch (electrical/mechanical)...................................................... 14 Receiver......................................................................................................... 17
Receiver: EGSM900/GSM1800/GSM1900 Filter to Demodulator ...................................17 IC Overview ........................................................................................................................19
4.4.1 4.4.2
4.5
Transmitter.................................................................................................... 20
Transmitter: Modulator and Up-conversion Loop...............................................................20 Transmitter: Power Amplifier ..............................................................................................21
4.5.1 4.5.2
5
LOGIC / CONTROL........................................................................................... 22
5.1 Overview of Hardware Structure ................................................................. 22 5.1.1 Logic Block Diagram ..........................................................................................................22 5.1.2 Block Diagram M55 Control Part........................................................................................22 5.1.3 EGOLD+ .............................................................................................................................23 5.1.4 SRAM .................................................................................................................................27 5.1.5 FLASH ................................................................................................................................27 5.1.6 SIM .....................................................................................................................................27 5.1.7 Vibration Motor ...................................................................................................................28
6 6.1
POWER SUPPLY.............................................................................................. 28 Power Supply ASIC ...................................................................................... 28
Pinout diagram ...................................................................................................................29 Power Supply Diagram.......................................................................................................30 Power Supply Operating mode: .........................................................................................31 Power Supply Functions:....................................................................................................32 6.1.1 6.1.2 6.1.3 6.1.4
6.2 6.3 7
Battery ........................................................................................................... 34 Charging Concept......................................................................................... 34 INTERFACES.................................................................................................... 38
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7.1 7.2 7.3 7.4
Vibra............................................................................................................... 38 Earpiece......................................................................................................... 38 Microphone ................................................................................................... 39 Battery ........................................................................................................... 39
7.5 IO Connector with ESD protection .............................................................. 40 7.5.1 IO Connector New Slim Lumberg ...................................................................................40 7.5.2 ESD Protection with EMI filter ............................................................................................41
7.6
7.7
SIM ................................................................................................................. 42 Display........................................................................................................... 42 ACOUSTIC........................................................................................................ 43 Microphone ................................................................................................... 43
Mechanical .........................................................................................................................43 Electrical .............................................................................................................................43
8 8.1
8.1.1 8.1.2
8.2
Earpiece/Loudspeaker ................................................................................. 44
Mechanical .........................................................................................................................44 Electrical .............................................................................................................................44
8.2.1 8.2.2
9 9.1 9.2 9.3 10
DISPLAY AND ILLUMINATION........................................................................ 45 Display........................................................................................................... 45 Illumination ................................................................................................... 45 Light Night..................................................................................................... 46 KEYBOARD ................................................................................................... 47
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1 List of available level 2,5e parts M55
ID-No D171 D361 D800 D890 D920 N282 R959 V151 V181 V211 V212 V213 V215 V361 V501 V850 V920 V921 V950 V951 Z171 Z211 Z850 Z851 Z880 Z900 Z950 C914 C368 C369 C370 C371 C373 IC IC IC VCO IC IC Resistor Diode Diode Transistor Transistor Diode Diode Transistor Transistor Transistor Diode Transistor Transistor Diode Quartz Filter VCO Filter IC IC Quartz Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Type Egold+ ASIC_Salzburg_Light Transceiver IC Transmitter_VCO PA_Comperator Volt.Regulator_Light Temp_Resistor Diode_KB7 Diode_Battery_Interface Tran._Vibra Tran._Light Diode_SIM_Vibra Diode_IO Connector Tran._Charge Tran._Light_Night Tran._VCO_Switch Feedback_Diode Tran._PA_Switch Tran._26MHz_Ampl. Capa_Diode Quarz/Egold Logic/IO_Interface 1LO_VCO Filter_BALUN Ant_Switch_Diplexer Power_Amplifier Oszillator_26MHz Buffer Capacitor PA Capacitor VREGRF2 Capacitor VREGRF1 Capacitor VREG3 Capacitor VREG2 Capacitor VREG1 Name, Location Part-No. V39197-F5019-F415 V30145-J4682-Y47 V20820-L6105-D670 V20820-L6132-D670 V20820-L6133-D670 V20810-C6098-D670 V39120-F4223-H V20840-D5030-D670 Q62702-A1051 V20830-C1097-D670 V20830-C1112-D670 V20840-D53-D670 V20840-D3084-D670 V20830-C1110-D670 V20830-C1112-D670 V20820-C6047-D670 V20840-D5049-D670 V20820-C6047-D670 V20840-C4049-D670 V20840-D61-D670 V30145-F102-Y10 V39197-F5000-F116 V30145-G100-Y96 V30145-K260-Y41 V30145-K280-Y244 V24851-Z2002-A59 V30145-F260-Y17 V39377-F6225-M V39377-F6225-M V39377-F6225-M V39377-F6225-M V39377-F6225-M V39377-F6225-M
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ICM MP CCQ GRM 01/03
2 Required Equipment for Level 2,5e
-
GSM-Tester (CMU200 or 4400S incl. Options) PC-incl. Monitor, Keyboard and Mouse Bootadapter 2000/2002 (L36880-N9241-A200) Adapter cable for Bootadapter due to new Lumberg connector Troubleshooting Frame M55 (F30032-P208-A1) Power Supply Spectrum Analyser min. 4GHz Active RF-Probe incl. Power Supply Oscilloscope incl. Probe RF-Connector (N<>SMA(f)) Power Supply Cables Dongle (F30032-P28-A1) if USB-Dongle is used a special driver for NT is required BGA Soldering equipment
Reference: Equipment recommendation V1.2 (downloadable from the technical support page)
3 Required Software for Level 2,5e M55
-
Windows NT Version4 Winsui version1.43 or higher Software for GSM-Tester ( Cats(Acterna/Wiltek) or CMU-GO(Rohde&Schwarz) ) Software for reference oscillator adjustment Internet unblocking solution Dongle driver for USB-Dongle if used with WIN NT4
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4 Radio Part
The radio part is designed for Tripple Band operation, covering EGSM900, GSM1800 as well as GSM 1900 frequencies, and can be divided into 4 Blocks. -Power supply for RF-Part -Transmitter -Receiver -Synthesizer, The RF-Part has it´s own power supply realised by a voltage regulator which is located inside the ASIC. The voltages for the logic part are generated by the Power-Supply ASIC too. The transmitter part converts the I/Q base band signals supplied by the logic (EGOLD+) into RF-signals with characteristics as defined in the GSM recommendation (www.etsi.org) After amplification by a power Amplifier the signal is radiated via the internal or external antenna. The receiver part converts the received GMSK signal supplied by the antenna into IQ base band signals which are further processed by the logic (EGOLD+). The synthesizer generates the required frequencies for the transmitter and receiver. A 26MHz oscillator is acting as a reference frequency. Restrictions: The mobile phone can never transmit and receive in both bands simultaneously. Only the monitor time slot can be selected independently of the frequency band. Transmitter and receiver can of course never operated simultaneously.
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4.1 Power Supply RF-Part
The voltage regulator for the RF-part is located inside the ASIC D361.(see chapter 5.2).It generates the required 2,8V "RF-Voltages" named VCC2_8 and VCC_SYN . The voltage regulator is activated as well as deactivated via SLEEPQ (TDMA-Timer H16) and VCXOEN_UC (Miscellaneous R6) provided by the EGOLD+. The temporary deactivation is used to extend the stand by time.
Circuit diagram
VCC2_8 VCC_SYN
Between Power Supply ASIC and RF-Part a resistor based interface consisting of resistor R841 for VCC2_8 and R843 for VCC_SYN is used .
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4.2 Frequency generation
4.2.1 Synthesizer: The discrete VCXO (26MHz)
The M55 mobile is using a reference frequency of 26MHz for the Hitachi chip set. The generation of the 26MHz signal is done via a discrete "Colpitts" VCXO. This oscillator consists mainly of: A 26MHz crystal An oscillator switch A capacity diode Z950 V950 V951
TP (test point) of the 26MHz signal is the TP 1501 The oscillator output signal 26MHz_RF is directly connected to the BRIGHT IC (pin 38) to be used as reference frequency inside the Bright (PLL). The signal leaves the Bright IC as BB_SIN26M at (pin 36) to be further used from the EGOLD+ (D100 (functional T3)).
Bright 4
To compensate frequency drifts (e.g. caused by temperature) the oscillator frequency is controlled by the (AFC) signal, generated through the internal EGOLD+ (D100 (functional U5)) PLL via the capacity diode V951. Reference for the "EGOLD-PLL" is the base station frequency. To compensate a temperature caused frequency drift, the temperature-depending resistor R959 is placed near the VCXO to measure the temperature. The measurement result TVCXO is reported to the EGOLD+(Analog Interface P3) via R138 as the signal TENV.
The required voltage VCC_SYN is provided by the ASCI D361
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Circuit diagram
from EGOLD
to Bright IC
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4.2.2
Synthesizer: LO1
The first local oscillator is needed to generate frequencies which enables the transceiver IC to demodulate the receiver signal and to perform the channel selection in the TX part. To do so, a control voltage for the LO1 is used. Gained by a comparator. (located inside the Transceiver (Bright -IC)). This control voltage is a result of the comparison of the divided LO1 and the 26MHz reference Signal. The division ratio of the dividers is programmed by the EGOLD+, according to the network channel requirements.
26MHz
The first local oscillator (LO1) consists of the PLL inside the Bright (D800), an external loop filter and the VCO (Z850) module. This LO1 circuit generates frequencies from 3700-3980 MHz for EGSM900 3580-3760 MHz for GSM1800 3860-3980 MHz for GSM1900
Formula to calculate the TX frequencies:
EGSM900 Channel: 975...1023/76...92 Channel: 0...75/93...124 GSM1800 Channel: 512...661 Channel: 662...885 GSM1900 Channel: 512...810 = (Channel freq. + 80MHz) * 2 = (Channel freq. + 80MHz) * 2 = (Channel freq. + 82MHz) * 2 = (Channel freq. + 82MHz) * 4 = (Channel freq. + 80MHz) * 4
Formula to calculate the RX frequencies:
EGSM900 = Channel freq. * 4 GSM1800 = Channel freq. * 2 GSM1900 = Channel freq. * 2
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The VCO (Z850) is switched on by the EGOLD+ signal PLLON (TDMA-Timer F16) via V850 and therefore supplied with VCC2_8. The VCO guarantees by using the control voltage at pin5 a coverage of the EGSM900, GSM1800 and GSM1900 frequency band and frequency stability. The Bright gained control voltage passes on the way to the VCO a discreet loop filter (typical value from 0,5 2,1V). The channel programming of the PLL happens via the EGOLD+ signals RFDATA; RFCLK; RFSTR. (RF Control J15, J16, J17). If the Bright IC gets via the same signals a GSM1800 channel information, the VCO is switched to this frequency by Pin 42 Bright (Pin 3 VCO). For GSM900 - RX - TX For GSM1800 - RX - TX For GSM1900 - RX - TX = "low signal" for channel 975-49 = "high signal" for channel 50-124 = "high signal" for all channels = "low signal" for all channels = "low signal" for all channels = "high signal" for all channels = "high signal" for all channels
The VCO output signal passes the "Balun" transformer (Z851) with insertion losses of ~ 2dB to arrive at the Bright IC. The required voltage VCC8_8 is provided by the ASIC D361 Circuit diagram
from EGOLD+
Bright 4
26MHz
Balun transformer
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VCO
TOP View
4.2.3
Synthesizer: LO2
The second local oscillator is required for transmitter operations only. It consists of a PLL and a VCO which are integrated inside the Bright 4, and an external second order loopfilter (R831; C830; C832). Before the VCO generated 640 or 656MHz signal arrives at the modulator, it is divided by 8. So the resulting frequency after the IQ modulator is 80/82MHz (depending on channel and band). Programming of the LO2 PLL is done in the same way as described at the LO1. The tree-wire-bus (EGOLD+ signals RFDATA; RFCLK; RFSTR. (RF Control J15, J16, J17) is used. To ensure the frequency stability, the 640MHz VCO signal is compared by the phase detector of the 2nd PLL with the 26MHz reference signal. The resulting control signal passes the external loop filter and is used to control the 640/656MHz VCO. The required voltage VCC_SYN is provided by the ASIC D361
Circuit diagram
Loop-filter LO2
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4.2.4
Synthesizer: PLL
PLL as a part of the BRIGHT IC Blockdiagram
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4.3 Antenna switch (electrical/mechanical)
Internal/External <> EGSM900/GSM1800/GSM1900 <> Receiver/Transmitter
The M55 mobile has two antenna switches. a) b) The mechanical antenna switch for the differentiation between the internal and external antenna The electrical antenna switch, for the differentiation between the receiving and transmitting signals. To activate the correct settings of this diplexer, the EGOLD+ signals RF_SW and TXON_GSM are required
As a new feature the M55 has an integrated "SAR detection" circuit. This circuit is used to decide if the internal antenna or an external antenna is used. The goal is, to reduce the transmit power when the internal antenna is used and the mobile is held very close to the body. On the other hand, the mobile can send with more power, if the external antenna is used. This distinction is done by the SAR detection circuit which consists of the voltage divider R872 and R873. The ANT_DET output provides a high level when the external antenna is used. ANT_DET (Serial Interface L16) is connected to the EGOLD+. Required voltage is VCC_ANT_DET (VCC2_8 via R892)
a)
Internal/External antenna switch
External to / from diplexer Internal
to EGOLD
Sheet 1 near TXVCO
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b)
The electrical antenna switch
to Antenna
to Bright
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Z880 Top View
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4.4 Receiver
4.4.1 Receiver: EGSM900/GSM1800/GSM1900 Filter to Demodulator
From the antenna switch, up to the demodulator the received signal passes the following blocks to get the demodulated baseband signals for the EGOLD+:
Filter
Z880
LNA
Bright
Demodulator
Bright
PGC
Bright
Filter: The EGSM900, GSM1800 and GSM 1900 filters are located inside the frontend module. The Filter are centred to a frequency of 942,5MHz for EGSM900, 1847,5MHz for GSM1800 and 1960MHZ for GSM1900. The symmetrical filter output is matched via LC-Combinations to the LNA input of the BRIGHT (D800) LNA: The 2 LNA´s (EGSM900/GSM1800/GSM1900) are located inside the BRIGHT and are able to perform an amplification of ~ 20dB. The LNA can be switched in HIGH (On) and LOW (Off) mode and is controlled by the Bright depending on EGOLD+ information. Demodulator: The Bright IC performs a direct demodulation of the received GSM signals. To do so the LO1 is required. The channel depending LO1 frequencies for 1800MHz/1900MHz bands are divided by 2 and by 4 for 900MHz band, Bright internally. PGC: After demodulation the "I" and "Q" signals are amplified by the PGC-Amplifier the "I" and the "Q" path are amplified independently from each other. The performance of this PGC is 80dB (-26 up to 54dB), switchable in steps of 2dB. The control is realised through the EGOLD+ signals (RFDATA; RFCLK; RFSTR.(RF Control J15, J16, J17). After passing a Bright internal switch (necessary because of the double using of RX and TX lines), the signals are ready for further processing through the EGAIM (part of the EGOLD+) The post-switched logic measures the level of the demodulated baseband signal an regulates the level to a defined value by varying the PGAAmplification and switching the appropriate LNA gains The required voltage VCC_SYN is provided by the ASIC D361
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Circuit diagram from LO1
from antenna
progr. signals
to EGOLD+
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4.4.2
IC Overview
IC Overview BRIGHT IV
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4.5 Transmitter
4.5.1 Transmitter: Modulator and Up-conversion Loop
The modulation is based on the principle of the "up-conversion modulation phase locked loop" and is accomplished via the BRIGHT IC(D800). An internal TX IF-LO provides the quadratic modulator with the TX IF frequency of 80/82 MHz by generating 640/656MHz divided by 8. This so generated IF GMSK RF signal is compared in a phase detector with the down mixed GMSK RF output from the TXVCO (Z150). To get the comparison signal, PCN_PA_IN (for GSM1800/GSM1900), and GSM_PA_IN (for EGSM900) appearing at Pin 9/7 of the (D150) are mixed with the LO1 signal (divided by 2 for GSM1800/GSM1900 and 4 for EGSM900). The output (PLLOUT) signal of the phase detector passes a discrete loop filter realised by capacitors and resistors to set the TXVCO to required frequency. The large loop band width (~1,5MHz) guarantees that the regulating process is considerably quicker than the changes in the modulation signal.
The required voltage VCC_SYN and VCC2_8 is provided by the ASIC D361
LO1
from EGOLD+
to PA
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4.5.2
Transmitter: Power Amplifier
The output signals (PCN_PA_IN , and GSM_PA_IN) from the TX-VCO are led to the power amplifier (Z900) passing a matching circuit. The PA is a "two in one" PA (one for EGSM 900 and one for GSM1800 and GSM 1900) and is connected directly to BATT+. The band selection switching is done via GSM_ON from the Bright IC. After amplification, a part of the output signals (TX_PCN_OUT and TX_GSM_OUT) is decoupled via a directional coupler. The other part runs through the antenna switch (Z880) inside the FEM and the antenna connector (X870) to the antenna. The decoupled part is equalised by the detector diode (V920) and used from the RF-Power Regulator IC (D920) to get a PA control voltage, by comparing this voltage with the PA_RAMP signal provided from the EGOLD+ (analogue interface J2). The (N920) is activated through the signal TXON1. TXONPA enables with a "high" signal the output "a" (pin 4). The required voltage BATT+ is provided by the battery. The required voltage VCC2_8 is provided by the ASIC D361. to Ant. connector
from TXVCO
Blockdiagram of LML240 (PA control IC)
Vho Vd Vd
PA_ON
BS
Vd Vd
Vs
Vs
Vf Vr Ra
Vd Out Vs Vd Out
TC Gn
Vs Comp Comp
10 9 8 7 6
Top view
1 2 3 4 5
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5 Logic / Control
5.1 Overview of Hardware Structure
5.1.1 Logic Block Diagram
RFPart
RF Control
5.1.2
Block Diagram M55 Control Part
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5.1.3
EGOLD+
Block Diagram EGOLD+ V3.1
16 bit I/O Ports
3 2 2 3 Enable Signals to X- and PD-Bus Peripherals 6
E-GOLD+ V3.0 Architecture
Single Chip Cellular Baseband Processor
Package: P-LFBGA-208
Viterbi HW Accelerator GMSK Modulator
Interp./ Noise Shaper
Osc.
32.768 kHz
RTC
SSC
SPI compatible
DAC
R-String
Clock Generation
16
2
CAPCOM
2 x 8 bit
32 kHz
ASC0
Autobaud Detect
ASC1
Peripheral Enable Generator
I2S
DSP Serial Comm. Interface / DAI
Interp./ Noise Shaper
DAC
R-String
2
GPT1/GPT2 Watchdog
Power Management DSP Timer1 DSP Timer2
Cipher Unit
A51/52 P ROM 60k x 16 P RAM 4k x 16 Y RAM 2k x 16 X RAM 15k x 16 X ROM 36k x 16
ID Register
6
PD-Bus
13/26/52 MHz / 32 kHz
READY# NMI# HOLD# HLDA# CLKOUT RSTOUT#
MCU
C166S
DPEC
OAK78 DSP
78 MHz
Voiceband Filters
RX and TX
ADC
MUX
2
2 2
X-Bus
Interleaving / De-Interleaving Speech Coding/Decoding (FR, HR, EFR, AMR) Level Measurement Channel Coding/Decoding (FR, HR, EFR, AMR) Equalization Encryption / Decryption Voice Memo/Voice Dialing GPRS support
DAC
2
Multicore Debug Support
5
MMCI V5.4
80
OCDS
Interrupt Controller
Baseband Filter/ CordicProcessor
ADC 12 bit resolution ADC
2
8
2
Dual Port RAM
1k x 16
8 21
16 24
External Bus & Port Controller SRAM
CS(4:0)
Switch Matrix
LM-Bus Boot Block
OCEM
Interrupt Controller
Battery & Temperature Measurement
PROM
1k x 16
256k x 8
SEIB
3
AFC Unit
Pulse-Carry Mod.
Bus Interface Unit
RF Output Power Control Shared Memory
Dual Port 512 x 16 reference voltage 10 bit DAC
I2C
Bandgap
Keypad Interface
2 4 6
SIM card Interface
High Speed (F=512, D=8/16)
GPRS Cipher Unit
Logic Arranger (LPA)
4
TAP Controller GSM
TDMA Timer
8
RF Control
3
JTAG Boundary Scan
confidential
The EGOLD+ contains a 16-bit micro-controller (µC part), a GSM analog Interface (EGAIM), a DSP computing core (DSP part) and an interface for application-specific switch-functions. The µC part consists of the following: · Micro-controller · System interfaces for internal and external peripheries · On-chip peripheries and memory The Controller Firmware carries out the following functions: · Control of the Man Machine Interface (keypad, LCD, sensing element, control of the illumination,...) · GSM Layer 1,2,3 /GPRS · Control of radio part (synthesizer, AGC, AFC, Transmitter, Receiver...), · Control of base band processing (EGAIM) · Central operating system functions (general functions, chip select logic, HW driver, control of mobile phones and accessories...).
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The EGAIM part contains the interface between the digital and the analogue signal processing: · 2 Sigma Delta A/D converters for RX signal, and for the necessary signals for the charge control and temperature measurement. For this, the converter inputs are switched over to the various signals via the multiplexer. · 2 D/A converters for the GMSK-modulated TX signal, · 1 D/A converter for the Power Ramping Signal, · 1 Sigma Delta A/D and D/A converter for the linguistic signal. Blockdiagram EGAIM inside the EGOLD
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Measurement of Battery and Ambient Temperature The battery temperature is measured via the voltage divider R1387, R138 by the EGOLD+ (Analog Interface P2). For this, the integrated converter of the RX-I base band branch is used. This converter compares the voltage of TBAT and TENV internally. Through an analogue multiplexer, either the RX-I base band signal, or the TBAT signal and the TENV signal is switched to the input of the converter. The signal MEAS_ON from the EGOLD+(GSM TDMA-TIMER H15) activates the battery voltage measurement The ambient temperature TENV is measured directly at of the EGOLD+ (Analog Interface P3).
Measurement of the Battery Voltage The measurement of the battery voltage is done in the Q-branch of the EGOLD+, for this BATT+ is connected via a voltage divider R143, R146 to the EGOLD+(Analog Interface P1). An analogue multiplexer does the switching between the baseband signal processing and the voltage measurement.
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A/D conversion of MIC-Path signals incl. coding The Microphone signals (MICN2, MIP2, MICP1, MICN1) arrive at the voiceband part of the EGOLG+. For further operations the signals will be converted into digital information, filtered, coded and finally formed into the GMSK-Signal by the internal GMSK-Modulator. This so generated signals (RF_I, RF_IX, RF_Q, RF_QX) are given to the Bright IC in the transmitter path. D/A conversion of EP-Path signals incl. decoding Arriving at the baseband-Part the demodulated signals (RF_I, RF_IX, RF_Q, RF_QX) will be filtered and A/D converted. In the voiceband part after decoding (with help of the µC part) and filtering the signals will be D/A converted amplified and given as (EPP1_FIL, EPN1_FIL) to the Power Supply ASIC. Generation of the PA Control Signal (PA_RAMP) The RF output power amplifier needs an analogue ramp up/down control voltage. For this the system interface on EGOLD+ generates 10 bit digital values which have to be transferred serially to the power ramping path. After loading into an 10 bit latch the control value will be converted into the corresponding analogue voltage with a maximum of ~2V
Key-Value
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The DSP part contains: · DSP signal processor · Separate program/data memory · a hardware block for processing the RX signal, · a hardware block for "ciphers", · a hardware block for processing the linguistic signal, · a hardware block for the "GMSK modulator", · De-/ interleaving memory, · Communication memory · a PLL for processing and reproducing the VCXO pulse signal. In the DSP Firmware are implemented the following functions: · scanning of channels, i.e., measurement of the field strengths of neighbouring base stations · detection and evaluation of Frequency Correction Bursts · equalisation of Normal Bursts and Synchronisation Bursts · channel encoding and soft-decision decoding for fullrate, enhanced-fullrate and adaptive multirate speech, fullrate and halfrate data and control channels. · channel encoding for GPRS coding · fullrate, enhanced fullrate and adaptive multirate speech encoding and decoding · mandatory sub-functions like discontinuous transmission, DTX voice activity detection background noise calculation · generation of tone and side tone · hands-free functions · support for voice memo · support for voice dialling · loop-back to GSM functions · GSM Transparent Data Services and Transparent Fax · calculation of the Frame Check Sequence for a RLP frame used for GSM NonTransparent Data Services · support of the GSM ciphering algorithm Real Time Clock (integrated in the EGOLD+): The real time clock is powered via a separate voltage regulator inside the Power Supply ASIC. Via a capacitor, data are kept in the internal RAM during a battery change for at least 30 seconds. An alarm function is also integrated with which it is possible to switch the phone on and off.
5.1.4
SRAM
4 Mbit 16Bit
Memory for volatile data Memory Size: Data Bus:
5.1.5
FLASH
64Mbit (8 Mbyte) 16 Bit
Memory Size: Data Bus:
5.1.6
SIM
SIM cards with supply voltages of 1.8V and 3V are supported.
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5.1.7
Vibration Motor
The vibration motor is mounted in the lower case. The electrical connection to the PCB is realised with pressure contacts.
6 Power Supply
6.1 Power Supply ASIC
The power supply ASIC contains the following functions: · Powerdown-Mode · Sleep Mode · Trickle Charge Mode · Power on Reset · Digital state machine to control switch on and supervise the µC with a watchdog · Voltage regulator · Low power voltage regulator · Additional output ports · Voltage supervision · Temperature supervision with external and internal sensor · Battery charge control · TWI interface · I2C interface · RC Oscillator · Audio multiplexer · Audio amplifier stereo/mono · 18 bit Sigma/Delta DAC with Clock recovery · Bandgap reference* INFO: * Bandgap reference The p-n junction of a semiconductor has a bandgap-voltage. This bandgap-voltage is almost independent of changes in the supply voltage and has a very low temperature gradient. The bandgap-voltage is used as reference for the voltage regulators. To reduce the power dissipation of the ASIC and to ensure high efficiency of the power management concept a DCDC Converter for the Core (EGOLD+V3 Baseband Chipset), Flash and SRAM supply is used. The DCDC converter includes the following functions: · PFM Mode for sleep mode of the Mobile Phone. · PWM Mode for active mode of the Mobile Phone. The mode change is controlled by the ASIC with the signal EN_DC_DOWN based on the EGOLD+ signal VCXO_EN.
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6.1.1
Pinout diagram
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6.1.2
Power Supply Diagram
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6.1.3
Power Supply Operating mode:
- Power Down Mode (mobile is switched off) In power down mode the current consumption is very low. The inputs for switch on conditions (ON/OFF PinH2, ON/OFF2 PinJ3, VDD_CHARGE PinC3), the LPREG with his own voltage reference and POR cells are active. All other blocks are switched off, so the battery discharging will be kept to a minimum. This is the state when the phone is switched off. - Start Up Mode (user switch on, RTC switch on) "Start Up Mode" can be initiated by ON_OFF (falling edge) or ON_OFF2 (rising edge). In this mode a sequential start-up, of reference oscillator, voltage supervision and regulators is controlled by digital part. In case of failure (overvoltage or time out of the µC reaction), the ASIC shuts down. -Trickle Charge Mode (to be able to charge the battery) In case of a rising edge at VDD_CHARGE, the ASIC goes from power down to an interim state. In this state, the oscillator and the reference are started. If the voltage on VDD_CHARGE is below the charger detection threshold, the ASIC shuts off. If the voltage on VDD_CHARGE is high enough the signal EXT_PWR is going to H and the power up continues. Depending on the voltage of the battery an initial charging of the battery of the circuit is immediately done. If the Trickle Charge Mode is entered with a very low battery, the supply for the ASIC itself is generated from the internal VDDREF regulator. If a failure is detected (overvoltage), the ASIC is switched off. - Normal Mode (following Start Up Mode or Trickle Charge Mode) The normal mode is the situation, where the startup has been finished and the ASIC starts the external µC by changing the signal RESETN from low to high. Mode: a) Active Mode with full capabilities of all blocks b) Sleep Mode with reduced capabilities of some blocks and some even not available at all. -Active Mode (submode of Normal Mode) In this mode, the µC controls the charging block and most of the failure cases. The ASIC can be controlled by the TWI interface, interrupt request can be sent by the ASIC. Furthermore, the voltages are supervised ( in case of failure the µC will be informed). In case of watchdog failure, overvoltage or power on request, the ASIC will be switched off immediately. The mono and the stereo block can be switched on in active mode. -Sleep Mode (submode of Normal Mode) Intention of the mode is to have a limited set of functions available with a reduced current consumption. A low level at the pin SLEEP1_N will switch from Active Mode to Sleep Mode. In Sleep Mode all charging functions and supply overvoltage detection are switched off. LDO undervoltage detection, clock and reference voltages are active. LDOs are working in low current mode. The battery voltage comparators are available, the audio block can be switched on.
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6.1.4
Power Supply Functions:
- Power on Reset To guarantee a defined startup, the ASIC will be reset by a Power on Reset block. After Power on Reset the ASIC will enter the power done Mode. If the thresholds will be reached during operating mode the reset will become the device enters the power down mode. This blocks are always active and will be supplied by VDDREF. - Switch on and watchdog There are 3 different possibilities to switch on the phone via external pins: -VDD_CHARGE with rising edge -ON/OFF with falling edge -ON/OFF2 with rising edge In order to guarantee a defined start-up behavior of the external components, a sequential power up is used and the correct start up of blocks is supervised. In normal mode, a continues watchdog signal from the µC is needed to keep the system running. If this signals fails, the ASIC will switch to power down mode. It must be guaranteed, that each start up condition does not interfere and block the other possible start up signals. In case of failure during start up, the device will go back to power down mode. To guarantee that the connection of the a charging unit with a very low battery is detected, this detection must work level sensitive at the end of POR signal.
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- Watchdog monitoring As soon as the first Watchdog_µC pin rising is detected , the device start the watchdog monitoring procedure. Standard switch off of the phone is the watchdog. The first edge of watchdog is rising. If a falling edge is detected ass the first transient the device will go to power down mode again and the whole phone is switched off.
Rising and falling edges must be detected alternated. With any edge on Watchdog_µC pin a counter will be loaded. The next compared to the previous edge inverted edge must occur between end of TA0,TA1 and end of TB0,TB1. If the signal occurs before end of TA0, TA1 or is not detected until end of TB0, TB1, the device will go to power down mode immediately after the violation of the WD criteria occurs. TA0, TA1 ~ 0.4 sec TB0, TB1 ~ 3 sec
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6.2 Battery
As a standard battery a LiIon battery with a nominal capacity of 3,7 Volt/700mAh is used.
6.3 Charging Concept
Charging current Charging control signal
6.3.1.1 General
Charging Concept
The battery is charged in the unit itself. The hardware and software is designed for LiIon with 4.2V technology. Charging is started as soon as the phone is connected to an external charger. If the phone is not switched on, then charging takes place in the background (the customer can see this via the "Charge" symbol in the display). During normal use the phone is being charged (restrictions: see below). Charging is enabled via a PMOS switch in the phone. This PMOS switch closes the circuit for the external charger to the battery. The EGOLD+ takes over the control of this switch depending on the charge level of the battery, whereby a disable function in the POWER SUPPLY ASIC hardware can override/interrupt the charging in the case of over voltage of the battery (only for Manganese Chemistry Battery types e.g. NEC). With the new slim Lumberg IO connector we lose the charger recognition via SB line. Now we measure the charge current inside the POWER SUPPLY ASIC with a current monitor. The charging software is able to charge the battery with an input current within the range of 350-600mA. If the Charge-FET is switched off, then no charging current will flow into the battery (exception is trickle charging, see below). For controlling the charging process it is necessary to measure the ambient (phone) temperature and the battery voltage. The temperature sensor will be an NTC resistor with a nominal resistance of 22k at 25°C. The determination of the temperature is achieved via a voltage measurement on a voltage divider in which one component is the NTC. The NTC for the ambient temperature will be on the PCB (26 MHz part).
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Measurement of Battery, Battery Type and Ambient Temperature The voltage equivalent of the temperature and battery code on the voltage separator will be calculated as the difference against a reference voltage of the EGOLD. For this, the integrated converter in the EGOLD of the RX-I base band branch will be used. Via an analogue multiplexer, either the RX-I base band signal, the battery code voltage or the ambient temperature voltage can be switched over to the input of the converter. The 1-Bit data stream of the converter will be subjected to a data reduction via the DSP circuit so that the measured voltage (for battery and ambient temperature) will be available at the end as a 10-bit data word. Measurement of the Battery Voltage Analogue to the I-branch either the RX-Q base band signal or the battery voltage can be measured in the Q-branch. Processing in the DSP circuit will be done analogue to the I-branch. The EGOLD will be specified internally at voltage measurement input BATT+ for an input voltage of 3V...4.5V.
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Timing of the Battery Voltage Measurement Unless the battery is charging, the measurement is made in the TX time slot. During charging it will be done after the TX time slot. At the same time, either the battery temperature (in the I-branch) and the battery voltage (in the Q-branch) or the ambient temperature in the I-branch can be measured (the possibility of measurement in the Q-branch, the analogue evaluation of the battery coding, is used for HW-Coding). Other combinations are not possible. For the time of the measurement the multiplexer in the EGAIM must be programmed to the corresponding measurement. Recognition of the Battery Type The battery code is a resistor with a resistance depending on the manufacturer. Charging Characteristic of Lithium-Ion Cells LiIon batteries are charged with a U/I characteristic, i.e. the charging current is regulated in relation to the battery voltage until a minimal charging current has been achieved. The maximum charging current is approx. 600mA, minimum about 100mA. The battery voltage may not exceed 4.2V ±50mV average. During the charging pulse current the voltage may reach 4.3V. The temperature range in which charging of the phone may be started ranges from 5...40°C, and the temperature at which charging takes place is from 0...45°C. Outside this range no charging takes place, the battery only supplies current. Trickle Charging The POWER SUPPLY ASIC is able to charge the battery at voltages below 3.2V without any support from the charge SW. The current will by measured indirectly via the voltage drop over a shunt resistor and linearly regulated inside the POWER SUPPLY ASIC. The current level during trickle charge for voltages <2.8V is in a range of 20-50mA and in a range of 50-100mA for voltages up to 3.75V. To limit the power dissipation of the dual charge FET the trickle charging is stopped in case the output voltage of the charger exceeds 10 Volt. The maximum trickle time is limited to 1 hour. As soon as the battery voltage reaches 3.2 V the POWER SUPPLY ASIC will switch on the phone automatically and normal charging will be initiated by software (note the restrictions on this item as stated below). Normal Charging For battery voltages above 3.2 Volt and normal ambient temperature between 5 and 40°C the battery can be charged with a charge current up to 1C*. This charging mode is SW controlled and starts if an accessory (charger) is detected with a supply voltage above 6.4 Volt by the POWER SUPPLY ASIC. The level of charge current is limited/controlled by the accessory or charger. USB Charging For battery voltages above 3.2 Volt and normal Temperature between 5 and 40°C the battery can be charged with a charge current up to 1C. This charging mode is SW controlled and starts if an accessory (charger) with a supply voltage between 3.6 and 5.4 Volt is detected by the POWER SUPPLY ASIC during active mode of the phone. To enable this charging mode, the mobile phone must be registered (logged on) to a USB Host. The Charge-Only and Trickle-Charge Mode is not supported because of USB Spec. restrictions. The charge current is controlled by the POWER SUPPLY ASIC. INFO: * C-rate The charge and discharge current of a battery is measured in C-rate. Most portable batteries, are discharge with 1C. A discharge of 1C draws a current equal to the battery capacity. For example, a battery value of 1000mAh provides 1000mA for one hour if discharged at 1C. The same battery discharged at 0.5C provides 500mAfor two hours. At 2C, the same battery delivers 2000mA for 30 minutes. 1C is often referred to as a one-hour discharge; a 0.5 would be a two-hour, and a 0.1C a 10 hour discharge.
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Restrictions
· A battery which has completely run down can not be re-charged quickly because the battery voltage is less than 3.0V and the logic which implements the charge control cannot be operated at this low voltage level. In this case the battery is recharged via trickle-charging. However, the charging symbol cannot be shown in the display because at this time logic supply voltages are not operating. The charging time for this trickle-charging (until the battery can be fast-charged from then on) is in the range of 1 hour. If, within this time, the battery voltage exceeds 3.2V, then the POWER SUPPLY ASIC switches on the mobile and charging continues in the Charge-Only Mode. In some circumstances it can happen that after trickle-charging and the usually initiated switch-on procedure of the mobile, the supply voltage collapses so much that the mobile phone switches off again. In this case trickle charging starts again with a now raised threshold voltage of 3.75V instead of 3.2V, at maximum for 20 minutes. The POWER SUPPLY ASIC will retry switching on the phone up to 3 times (within 60 minutes overall). · Charging the battery will not be fully supported in case of using old accessory (generation `45' or earlier). It is not recommended to use any cables that adapt "old" to "new" Lumberg connector. Using such adapters with Marlin will have at least the following impact: 1) half-sine wave chargers (e.g. P35 & home station) can not be used for trickle charging 2) normal charging might be aborted before the battery is fully charged 3) EMC compliance can not be guaranteed · A phone with a fully charged LiIon battery will not be charged immediately after switch-on. Any input current would cause an increase of the battery voltage above the maximum permissible value. As soon as the battery has been discharged to a level of about 95% (due to current consumption while use), it will be re-charged in normal charging mode. · The phone cannot be operated without a battery. · The phone will be destroyed if the battery is inserted with reversed polarity: · design-wise it is impossible to wrongly pole the phone. This is prevented by mechanical means. · electrically, a correctly poled battery is presumed, i.e. correct polarity must be guaranteed by suitable QA measures at the supplier · The mobile phone might be destroyed by connecting an unsuitable charger: · a charger voltage >15V can destroy resistances or capacitors · a charger voltage >20V can destroy the switch transistor of the charging circuit In case the transistor fails the ASIC will be destroyed. In the case of voltages lower than 15V and an improper current limitation the battery might be permanently damaged. A protection against grossly negligent use by the customer (e.g. direct connection of the charge contact to the electricity supply in a motor car) is not provided. Customer safety will not be affected by this restriction.
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7 Interfaces
7.1 Vibra
XG215
Pin 1 2 IN/OUT Remarks I 2.9V O The FET V212, switching this signal, is controlled via the EGOLD+ signal VIBRA_UC.
7.2 Earpiece
XG250
Pin 1 Name EPP1 IN/OUT Remarks O 1st connection to the internal earpiece. Earpiece can be switched off in the case of accessory operation. EPP1 builds together with EPN1 the differential output to drive the multifunctional "earpiece" (earpiece, ringer, handsfree function). O 2nd connection to the internal earpiece. Earpiece can be switched off in the case of accessory operation. Page 38 of 49 ICM MP CCQ GRM Company Confidential © Copyright Siemens AG 01/03
2
EPN1
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7.3 Microphone
XG242
Pin 1 2 Name MICP1 GND_MIC IN/OUT I Remarks Speech signal. The same line carries the microphone power supply.
7.4 Battery
XG181
Pin 1 2 3 4 Name GND AKKU_TYP BATT+ Level 0V...2.65V 3 V... 4.5V Remarks Ground Recognition of battery/supplier Positive battery pole
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7.5 IO Connector with ESD protection
7.5.1 IO Connector New Slim Lumberg
Name Pin 1 POWER
IN/OUT Notes I/O POWER is needed for charging batteries and for supplying the accessories. If accessories are supplied by mobile, talk-time and standby-time from telephone are reduced. Therefore it has to be respected on an as low as possible power consumption in the accessories. Serial interface serial interface Data-line for accessory-bus Use as CTS in data operation. Use as RTS in data-operation. Clock-line for accessory-bus. Use as DTC in data-operation. driving ext. left speaker With mono-headset Audio_L and Audio_R differential mode driving ext. right speaker With mono-headset Audio_L and Audio_R differential Signal for ext. microphone External microphone
2 3 4 5 6 7 8
GND TX RX DATA/CTS RTS CLK/DCD AUDIO_L
O I I/O I/O I/O Analog O
9 10 11 12
AUDIO_R GND_MIC MICP2
Analog O Analog I Analog I
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7.5.2
ESD Protection with EMI filter
The Z211 is a 5-channel filter with over-voltage and ESD Protection array which is designed to provide filtering of undesired RF signals in the 800-4000MHz frequency band Additionally the Z211 contains diodes to protect downstream components from Electrostatic Discharge (ESD) voltages up to 8 kV. Pin configuration of the Z211
Z211 Circuit Configuration
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7.6 SIM
Pin 1
Name CCVCC
IN/OUT -
2 3 4 5 6 7
CCRST CCLK
O O
Remarks Switchable power supply for chipcard; 220 nF capacitors are situated close to the chipcard pins and are necessary for buffering current spikes. Reset for chipcard Pulse for chipcard. The chipcard is controlled directly from the EGOLD+.
GND CCIO I Data pin for chipcard; 10 k pull up at the CCVCC pin
7.7 Display
Pin 1 2 3 4 5 6 7 8 9 10
Name LCD_CS LCD_RESET LCD_RS LCD_CLK LCD_DAT 2.9V GND LCD_LED2_A LIGHT_K LCD_LED1_A
Remarks Chip select Reset Register select Clock Data line Power supply display controller GND Power supply display led 2 Switched GND for display led 1 and led 2 Power supply display led 1
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8 Acoustic
The buzzer and the keypad clicks will be realized over the earpiece. At normal buzzer the signaling will realized with swelling tones. At the same time a maximum sound pressure level in the coupler of 135 +/- 5dB(A) is fixed. The standard sounds will be generated by the EGOLD+, the advanced sounds will be generated via firmware running on the DSP.
8.1 Microphone
8.1.1 Mechanical
The microphone is built in the Mounting Frame Lower Part and is mechanically fixed with a rubber seal (gasket). The contact on the PCB is realised via spiral springs, which are integrated in the gasket. Because of usage of Unidirectional Microphone, the gasket has a front- and a back sound-inlet hole. The front sound-inlet is acoustically tighten connected with a sound-inlet at the rear-side of the mounting frame lower part. The back sound-inlet is acoustically tighten connected with a soundinlet at the bottom-side of the mounting frame lower part. The gasket of the microphone has a asymmetrical shape in order to provide non-rotating, guaranteed covering of the sound-inlets of mounting frame lower part to the corresponding soundinlets at microphone gasket.
8.1.2
Electrical
Both Microphones are directly connected to the EGOLD+.(Analog Interface G2, F1-G3, H2) via the signals MICN1, MICP1 (Internal Microphone )and MICN2, MICP2 (External Microphone/Headset). Power supply for the Microphone is VMIC (EGOLD+.(Analog Interface G1))
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8.2 Earpiece/Loudspeaker
8.2.1 Mechanical
The speakermodule is designed to provide optimal performance for mobile handsfree and sound ringer. Plus independent from mobile leakage sound performance. Therefore speakermodule is a system that has a closed front volume with soundoutlets towards the ear of the user. Backvolume of Speakermodule is using the unused air between the antenna and the PCB. Backvolume is just used for resonance, there is no sound output from backvolume. The speakermodule is glued to the lightguide and contacted via two bending springs to the PCB. The lightguide itself is screwed with six screws via the PCB to the mounting frame lower part. Two of the six screws are located besides of the connection of speakermodule and lightguide. Therefore a good and reliable connection between speakermodule and PCB should be provided.
8.2.2
Electrical
The internal and external Loudspeaker (Earpiece) is connected to the voiceband part of the EGOLD+ (Analog Interface B1, C1) via audio amplifier inside the ASIC (D361). Input EPN1_FIL - EPP1_FIL. Output for external loudspeaker AUDIO_L - AUDIO_R, for internal Loudspeaker EPP! EPN1. The ringing tones are generated with the loudspeaker too. To activate the ringer, the signal RINGIN from the EGOLD+ (Miscellaneous,D16) is used
to ASIC
from Bright IC
EGOLD+
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9 Display and Illumination
9.1 Display
The display is provided with 2,9V from the ASIC (D361). The communication with the EGOLD+ by the LCD-Signals, directly connected to the EGOLD+
9.2 Illumination
The light is switched via switches inside the EGOLD+. With the signal LIGHT_UC (Miscellaneous T17) the illumination for the keyboard and the display backlight is controlled. With LIGHT_OFF_N. (GSM TDMA-Timer G15) the illumination can be switched "on" and "off" during the TX timeslot.
Placed on the MMI Board
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9.3 Light Night
The Night light is switched via the signal LIGHT_NIGHT_U (upper LEDs) and LIGHT_NIGHT_L (lower LEDs). The Dynamic Light illumination is controlled via the EGOLD+. (LIGHT_NIGHT_U GSM TDMA-Timer G15 / LIGHT_NIGHT_L RF -Control K14)
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10 Keyboard
The keyboard is connected via the lines KB0 KB9 with the EGOLD+. KB 7 is used for the ON/OFF switch. The lines KB0 KB5 are used as output signals. In the matrix KB6, KB8 and KB9 are used as input signals for the EGOLD+.
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