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STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223
SuperMESHTM MOSFET

Table 1: General Features Figure 1: Package
TYPE VDSS RDS(on) ID Pw

STD1NK60 600 V < 8.5 1A 30 W
STD1NK60-1 600 V < 8.5 1A 30 W 3
STQ1HNK60R 600 V < 8.5 0.4 A 3W 1
STN1HNK60 600 V < 8.5 0.4 A 3.3 W
TYPICAL RDS(on) = 8 TO-92 (Ammopack) DPAK
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED 2

NEW HIGH VOLTAGE BENCHMARK 3
GATE CHARGE MINIMIZED 3 2
2 1
1
SOT-223
DESCRIPTION IPAK
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established
strip-based PowerMESHTM layout. In addition to Figure 2: Internal Schematic Diagram
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmeshTM products.


APPLICATIONS
LOW POWER BATTERY CHARGERS
SWITH MODE LOW POWER

SUPPLIES(SMPS)
LOW POWER, BALLAST, CFL (COMPACT

FLUORESCENT LAMPS)




Table 2: Order Codes
Part Number Marking Package Packaging
STD1NK60T4 D1NK60 DPAK TAPE & REEL
STD1NK60-1 D1NK60 IPAK TUBE
STQ1HNK60R 1HNK60R TO-92 BULK
STQ1HNK60R-AP 1HNK60R TO-92 AMMOPAK
STN1HNK60 N1HNK60 SOT-223 TAPE & REEL


Rev. 3
February 2006 1/15
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60

Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
DPAK / IPAK TO-92 SOT-223
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage