Text preview for : fdc6561an.pdf part of Fairchild Semiconductor fdc6561an . Electronic Components Datasheets Active components Transistors Fairchild Semiconductor fdc6561an.pdf
Back to : fdc6561an.pdf | Home
April 1999
FDC6561AN
Dual N-Channel Logic Level PowerTrenchTM MOSFET
General Description Features
These N-Channel Logic Level MOSFETs are 2.5 A, 30 V. RDS(ON) = 0.095 @ VGS = 10 V
produced using Fairchild Semiconductor's advanced RDS(ON) = 0.145 @ VGS = 4.5 V
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain Very fast switching.
low gate charge for superior switching performance.
Low gate charge (2.1nC typical).
These devices are well suited for all applications where
small size is desireable but especially low cost DC/DC SuperSOTTM-6 package: small footprint (72% smaller than
conversion in battery powered systems. standard SO-8); low profile (1mm thick).
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D2
S1 4 3
1
D1 .56
5 2
G2
S2
pin 1 G1 6 1
SuperSOT TM-6
Absolute Maximum Ratings TA = 25