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TECHNICAL DATA

NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208

Devices Qualified Level

2N1487 2N1488 2N1489 2N1490

MAXIMUM RATINGS
Ratings Symbol 2N1487 2N1488 Unit
2N1498 2N1490
Collector-Emitter Voltage VCEO 40 55 Vdc
Collector-Base Voltage VCBO 60 100 Vdc
Collector-Emitter Voltage VCEX 60 100 Vdc
Emitter-Base Voltage VEBO 10 Vdc
Base Current IB 3.0 Adc
Collector Current IC 6.0 Adc
Total Power Dissipation @ TC = 250C (1) PT 75 W TO-33*
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C (TO-204AA)
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
0
Thermal Resistance, Junction-to-Case RJC 2.33 C/W
1) Derate linearly @ 0.429 W/0C for TC > 250C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc 2N1487, 2N1489 V(BR)CEO 40 Vdc
2N1488, 2N1490 55
Collector-Emitter Breakdown Voltage
IC = 200