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February 1998

FDS8926A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features

SO-8 N-Channel enhancement mode power field effect 5.5 A, 30 V. RDS(ON) = 0.030 @ VGS = 4.5 V
transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.038 @ VGS = 2.5 V.
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching High density cell design for extremely low RDS(ON).
performance and minimize on-state resistance. These devices
are particularly suited for low voltage applications such as disk Combines low gate threshold (fully enhanced at 2.5V) with
drive motor control, battery powered circuits where fast high breakdown voltage of 30 V.
switching, low in-line power loss, and resistance to transients High power and current handling capability in a widely
are needed. used surface mount package.

Dual MOSFET in surface mount package.

SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

D2 5 4
D2
S
D1
D1
FD 6A 6 3
2
89
7 2
G2
S2
G1 8 1
SO-8 pin 1
S1

Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDS8926A Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage