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March 1996
NDC651N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel logic level enhancement mode power field 3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5V
effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V.
high cell density, DMOS technology. This very high density
process is tailored to minimize on-state resistance. These Proprietary SuperSOTTM-6 package design using copper
devices are particularly suited for low voltage applications in lead frame for superior thermal and electrical capabilities.
notebook computers, portable phones, PCMICA cards, and
other battery powered circuits where fast switching, and low High density cell design for extremely low RDS(ON).
in-line power loss are needed in a very small outline surface Exceptional on-resistance and maximum DC current
mount package. capability.
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4 3
5 2
6 1
Absolute Maximum Ratings T A = 25