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BUK91/9907-55ATE
TrenchPLUS logic level FET
Rev. 01 -- 7 February 2002 Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM technology, featuring very low on state resistance and TrenchPLUS
diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
sensing.
Product availability:
BUK9107-55ATE in SOT426 (D2-PAK)
BUK9907-55ATE in SOT263B.
2. Features
s Typical on-state resistance 5.8 m
s Q101 compliant
s ESD protection
s Monolithically integrated temperature sensor for overload protection.
3. Applications
s Automotive and power switching:
x 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
Steering (EPAS))
x Protected drive for lamps.
4. Pinning information
Table 1: Pinning - SOT426 and SOT263B simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb d a
2 anode (a) mb
3 drain (d)
g
4 cathode (k)
1 2 3 4 5
5 source (s)
mb mounting base; MBL317 s k
connected to drain (d) Front view MBK127
1 5
MBL263
SOT426 (D2-PAK) SOT263B
Philips Semiconductors BUK91/9907-55ATE
TrenchPLUS logic level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25