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FDMS2672 N-Channel UltraFET Trench MOSFET
February 2007

FDMS2672 tm

N-Channel UltraFET Trench MOSFET
200V, 20A, 77m
Features General Description
Max rDS(on) = 77m at VGS = 10V, ID = 3.7A UItraFET devices combine characteristics that enable
Max rDS(on) = 88m at VGS = 6V, ID = 3.5A benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
Low Miller Charge these devices are ideal for high frequency DC to DC converters.
RoHS Compliant Application
DC - DC Conversion

Pin 1 S S S G

D 5 4 G

D 6 3 S

D 7 2 S

D 8 1 S
D D D D
Power 56 (Bottom view)

MOSFET Maximum Ratings TA = 25