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STP5NK100Z, STF5NK100Z
STW5NK100Z
N-channel 1000 V, 2.7 , 3.5 A, TO-220, TO-220FP, TO-247
SuperMESH3TM Power MOSFET

Features
VDSS
Type RDS(on)max ID
(@TJMAX)
3
2
STF5NK100Z 1000 V < 3.7 3.5 A 1


STP5NK100Z 1000 V < 3.7 3.5 A TO-220 TO-220FP

STW5NK100Z 1000 V < 3.7 3.5 A

Extremely high dv/dt capability
100% avalanche tested 3
2
Gate charge minimized 1


Very low intrinsic capacitances TO-247

Very good manufacturing repeatibility

Applications
Switching application Figure 1. Internal schematic diagram
D(2)
Description
The new SuperMESHTM series of Power
MOSFETS is the result of further design
improvements on ST's well-established strip-
G(1)
based PowerMESHTM layout. In addition to
significantly lower on-resistance, the device offers
superior dv/dt capability to ensure optimal
performance even in the most demanding
applications. The SuperMESHTM devices further
complement an already broad range of innovative
high voltage MOSFETs, which includes the S(3)
revolutionary MDmeshTM products. AM01476v1



Table 1. Device summary
Order code Marking Package Packaging

STF5NK100Z F5NK100Z TO-220FP Tube
STP5NK100Z P5NK100Z TO-220 Tube
STW5NK100Z W5NK100Z TO-247 Tube




May 2009 Doc ID 10850 Rev 5 1/15
www.st.com 15
Contents STP5NK100Z, STF5NK100Z, STW5NK100Z


Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14




2/15 Doc ID 10850 Rev 5
STP5NK100Z, STF5NK100Z, STW5NK100Z Electrical ratings


1 Electrical ratings

Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220, TO-247 TO-220FP
VDS Drain-source voltage (VGS = 0) 1000 V
VGS Gate-source voltage