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March 1996
NDS8934
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These P-Channel enhancement mode power field effect -3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5V
transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -2.7V.
high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state High density cell design for extremely low RDS(ON).
resistance, provide superior switching performance, and
High power and current handling capability in a widely used
withstand high energy pulses in the avalanche and
surface mount package.
commutation modes. These devices are particularly
suited for low voltage applications such as notebook Dual MOSFET in surface mount package.
computer power management and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
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5 4
6 3
7 2
8 1
Absolute Maximum Ratings T A = 25