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April 1998

FDS6680
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description Features
This N-Channel Logic Level MOSFET has been designed 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V
specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.015 @ VGS = 4.5 V.
converters using either synchronous or conventional
switching PWM controllers. Optimized for use in switching DC/DC converters with
The MOSFET features faster switching and lower gate PWM controllers.
charge than other MOSFETs with comparable RDS(ON)
specifications. Very fast switching.
The result is a MOSFET that is easy and safer to drive (even Low gate charge (typical Qg = 19 nC).
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.

SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

5 4

6 3

7 2

8 1

Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDS6680 Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage