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BD533/5/7
BD534/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
s BD534, BD535, BD536, BD537 AND BD538
ARE SGS-THOMSON PREFERRED
SALESTYPES
DESCRIPTION
The BD533, BD535, and BD537 are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications. 3
The complementary PNP types are BD534, 2
1
BD536, and BD538 respectively.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BD533 BD535 BD537
PNP BD534 BD536 BD538
V CBO Collector-Base Voltage (IE = 0) 45 60 80 V
V CES Collector-Emitter Voltage (V BE = 0) 45 60 80 V
V CEO Collector-Emitter Voltage (I B = 0) 45 60 80 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
I C, I E Collector and Emitter Current 8 A
IB Base Current 1 A
P t ot Total Dissipation at T c 25 C o
50 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative.
June 1997 1/4
BD533/BD534/BD535/BD536/BD537/BD538
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 2.5 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 70 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off for BD533/534 V CB = 45 V 100